All MOSFET. 2SK1234 Datasheet

 

2SK1234 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK1234
   Type of Transistor: MESFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 5 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 0.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 33 Ohm
   Package: 2071

 2SK1234 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK1234 Datasheet (PDF)

 ..1. Size:46K  sanyo
 2sk1234.pdf

2SK1234

 8.1. Size:45K  sanyo
 2sk1238.pdf

2SK1234

 8.2. Size:45K  sanyo
 2sk1236.pdf

2SK1234

 8.3. Size:45K  sanyo
 2sk1235.pdf

2SK1234

 8.4. Size:46K  sanyo
 2sk1233.pdf

2SK1234

 8.5. Size:45K  sanyo
 2sk1239.pdf

2SK1234

 8.6. Size:45K  sanyo
 2sk1237.pdf

2SK1234

 8.7. Size:28K  panasonic
 2sk123.pdf

2SK1234 2SK1234

Silicon Junction FETs (Small Signal) 2SK1232SK123Silicon N-Channel JunctionUnit : mmFor impedance conversion in low frequency+0.25.8 -0.3For electret capacitor microphone+0.251.52.4 0.1 -0.051.9 0.1 Features 1 High mutual conductance gm3 Low noise voltage of NV2 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol Rating Unit1 : DrainDrain-Source vol

 8.8. Size:41K  panasonic
 2sk0123 2sk123.pdf

2SK1234 2SK1234

Silicon Junction FETs (Small Signal)2SK0123 (2SK123)Silicon N-Channel Junction FETFor impedance conversion in low frequencyUnit: mmFor electret capacitor microphone0.40+0.100.050.16+0.100.063 Features High mutual conductance gm Low noise voltage of NV1 2(0.95) (0.95)1.90.12.90+0.200.05 Absolute Maximum Ratings (Ta = 25C)10Parameter Symbol

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: TTX3401A | BF998WR

 

 
Back to Top