2SK1235 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK1235
Type of Transistor: MESFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 6 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 0.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 50 Ohm
Package: 2071
2SK1235 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK1235 Datasheet (PDF)
2sk123.pdf
Silicon Junction FETs (Small Signal) 2SK1232SK123Silicon N-Channel JunctionUnit : mmFor impedance conversion in low frequency+0.25.8 -0.3For electret capacitor microphone+0.251.52.4 0.1 -0.051.9 0.1 Features 1 High mutual conductance gm3 Low noise voltage of NV2 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol Rating Unit1 : DrainDrain-Source vol
2sk0123 2sk123.pdf
Silicon Junction FETs (Small Signal)2SK0123 (2SK123)Silicon N-Channel Junction FETFor impedance conversion in low frequencyUnit: mmFor electret capacitor microphone0.40+0.100.050.16+0.100.063 Features High mutual conductance gm Low noise voltage of NV1 2(0.95) (0.95)1.90.12.90+0.200.05 Absolute Maximum Ratings (Ta = 25C)10Parameter Symbol
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: 2SK1181
History: 2SK1181
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