All MOSFET. 2SK3448 Datasheet

 

2SK3448 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK3448
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.6 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: NMP

 2SK3448 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3448 Datasheet (PDF)

 ..1. Size:27K  sanyo
2sk3448.pdf

2SK3448
2SK3448

Ordering number : ENN67852SK3448N-Channel Silicon MOSFET2SK3448Ultrahigh-Speed Switching UseFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2087A 4V drive.[2SK3448] Meets radial taping.2.51.456.9 1.00.60.9 0.51 2 30.451 : Source2 : Drain3 : Gate2.54 2.54SpecificationsSANYO : NMPAbsolute Maximum Ratin

 8.1. Size:188K  toshiba
2sk3445.pdf

2SK3448
2SK3448

2SK3445 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3445 Switching Regulator, DC-DC Converter Applications Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 90 m (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 100 A (VDS = 250 V) Enhancement mode: Vth = 3.0 to 5

 8.2. Size:187K  toshiba
2sk3440.pdf

2SK3448
2SK3448

2SK3440 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3440 Switching Regulator, DC-DC Converter Applications Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 6.5 m (typ.) High forward transfer admittance: |Yfs| = 30 S (typ.) Low leakage current: IDSS = 100 A (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4

 8.3. Size:169K  toshiba
2sk3443.pdf

2SK3448
2SK3448

2SK3443 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3443 Switching Regulator, DC-DC Converter and Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 50 m (typ.) High forward transfer admittance: Yfs = 9 S (typ.) Low leakage current: IDSS = 100 A (VDS = 150 V) Enhancementmode: Vth = 3.0 to 5.0 V (V

 8.4. Size:167K  toshiba
2sk3442.pdf

2SK3448
2SK3448

2SK3442 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3442 Switching Regulator, DC-DC Converter and Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 15 m (typ.) High forward transfer admittance: Yfs = 28 S (typ.) Low leakage current: IDSS = 100 A (VDS = 100 V) Enhancement mode: Vth = 2.0~4.0 V (VD

 8.5. Size:189K  toshiba
2sk3441.pdf

2SK3448
2SK3448

2SK3441 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3441 DC-DC Converter Applications Unit: mmRelay Drive and Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 4.5 m (typ.) High forward transfer admittance: |Yfs| = 80 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 60 V) Enhancement mode: Vth = 1.3 to

 8.6. Size:222K  toshiba
2sk3444.pdf

2SK3448
2SK3448

2SK3444 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3444 Switching Regulator, DC-DC Converter Applications Unit: mmMotor Drive Applications Low drain-source ON resistance: RDS (ON) = 65 m (typ.) High forward transfer admittance: |Y | = 10 S (typ.) fs Low leakage current: I = 100 A (V = 200 V) DSS DS Enhancement-mode: Vth = 3.

 8.7. Size:28K  sanyo
2sk3449.pdf

2SK3448
2SK3448

Ordering number : ENN66722SK3449N-Channel Silicon MOSFET2SK3449DC / DC Converter ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2190 4V drive.[2SK3449]8.04.03.31.0 1.03.01.60.80.80.75 0.71 : Source1 2 32 : Drain3 : GateSpecifications2.44.8 SANYO : TO-126MLAbsolute Maximum Ratings at Ta=

 8.8. Size:93K  renesas
rej03g1101 2sk3447ds.pdf

2SK3448
2SK3448

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.9. Size:82K  renesas
2sk3446.pdf

2SK3448
2SK3448

2SK3446 Silicon N Channel Power MOS FET Power Switching REJ03G1100-0800 (Previous: ADE-208-1566F) Rev.8.00 Sep 07, 2005 Features Capable of 2.5 V gate drive Low drive current Low on-resistance RDS (on) = 1.5 typ. (at VGS = 4 V) Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92MOD)D1. SourceG2. Drain3. Gate321SRev.8.00

 8.10. Size:80K  renesas
2sk3447.pdf

2SK3448
2SK3448

2SK3447 Silicon N Channel Power MOS FET Power Switching REJ03G1101-0700 (Previous: ADE-208-1567E) Rev.7.00 Sep 07, 2005 Features Capable of 4 V gate drive Low drive current Low on-resistance RDS (on) = 1.5 typ. (at VGS = 10 V) Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92MOD)D1. SourceG2. Drain3. Gate321SRev.7.00 S

 8.11. Size:95K  renesas
rej03g1100 2sk3446ds.pdf

2SK3448
2SK3448

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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