All MOSFET. HUF76423D3 Datasheet

 

HUF76423D3 MOSFET. Datasheet pdf. Equivalent

Type Designator: HUF76423D3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 85 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 16 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 34 nC

Maximum Drain-Source On-State Resistance (Rds): 0.037 Ohm

Package: TO251AA

HUF76423D3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

HUF76423D3 Datasheet (PDF)

1.1. huf76423d3s.pdf Size:199K _fairchild_semi

HUF76423D3
HUF76423D3

HUF76423D3, HUF76423D3S Data Sheet December 2001 20A, 60V, 0.037 Ohm, N-Channel, Logic Level UltraFET Power MOSFETFairchild Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance - rDS(ON) = 0.032?, VGS = 10V DRAIN DRAIN - rDS(ON) = 0.037?, VGS = 5V SOURCE (FLANGE) (FLANGE) DRAIN GATE Simulation Models - Temperature Compensated PSPICE and SABER GATE Ele

2.1. huf76423p3.pdf Size:241K _fairchild_semi

HUF76423D3
HUF76423D3

HUF76423P3, HUF76423S3S Data Sheet December 2001 33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB Features DRAIN Ultra Low On-Resistance SOURCE (FLANGE) DRAIN - rDS(ON) = 0.030?, VGS = 10V GATE - rDS(ON) = 0.035?, VGS = 5V GATE Simulation Models - Temperature Compensated PSPICE and SABER SOURCE Electrical Models

 3.1. huf76429d3st.pdf Size:285K _update_mosfet

HUF76423D3
HUF76423D3

HUF76429D3, HUF76429D3S Data Sheet February 2005 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features • Ultra Low On-Resistance DRAIN - rDS(ON) = 0.023Ω, VGS = 10V SOURCE (FLANGE) DRAIN - rDS(ON) = 0.027Ω, VGS = 5V GATE • Simulation Models GATE - Temperature Compensated PSPICE® and SABER™ SOURCE Elect

3.2. huf76429s3st.pdf Size:206K _update_mosfet

HUF76423D3
HUF76423D3

HUF76429P3, HUF76429S3S Data Sheet December 2001 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET® Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB • Ultra Low On-Resistance DRAIN SOURCE - rDS(ON) = 0.022Ω, VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.025Ω, VGS = 5V • Simulation Models GATE - Temperature Compensated PSPICE® and SABER™ SOURCE Elect

 3.3. huf76429d f085.pdf Size:346K _fairchild_semi

HUF76423D3
HUF76423D3

 HUFA76429D3ST_F085 Data Sheet September 2010 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET® Power MOSFETs Packaging Features • Ultra Low On-Resistance JEDEC TO-252AA - rDS(ON) = 0.023Ω, VGS = 10V - rDS(ON) = 0.027Ω, VGS = 5V DRAIN (FLANGE) • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electriecal Models GATE - Spice and SABER Thermal Im

3.4. huf76429d3-s.pdf Size:288K _fairchild_semi

HUF76423D3
HUF76423D3

HUF76429D3, HUF76429D3S Data Sheet February 2005 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance DRAIN - rDS(ON) = 0.023?, VGS = 10V SOURCE (FLANGE) DRAIN - rDS(ON) = 0.027?, VGS = 5V GATE Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Electrical Models D

 3.5. huf76429s3s.pdf Size:207K _fairchild_semi

HUF76423D3
HUF76423D3

HUF76429P3, HUF76429S3S Data Sheet December 2001 44A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB Ultra Low On-Resistance DRAIN SOURCE - rDS(ON) = 0.022?, VGS = 10V DRAIN (FLANGE) GATE - rDS(ON) = 0.025?, VGS = 5V Simulation Models GATE - Temperature Compensated PSPICE and SABER SOURCE Electrical Models D

Datasheet: HUF76409P3 , HUF76413D3 , HUF76413D3S , HUF76413P3 , HUF76419D3 , HUF76419D3S , HUF76419P3 , HUF76419S3S , IRF9540 , HUF76423D3S , HUF76423P3 , HUF76423S3S , HUF76429D3 , HUF76429D3S , HUF76429P3 , HUF76429S3S , HUF76432P3 .

 
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