All MOSFET. HUF76429D3S Datasheet

 

HUF76429D3S Datasheet and Replacement


   Type Designator: HUF76429D3S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 46 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: TO252AA
 

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HUF76429D3S Datasheet (PDF)

 0.1. Size:285K  fairchild semi
 huf76429d3st.pdf pdf_icon

HUF76429D3S

HUF76429D3, HUF76429D3SData Sheet February 200520A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAIN- rDS(ON) = 0.023, VGS = 10VSOURCE (FLANGE)DRAIN- rDS(ON) = 0.027, VGS = 5VGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEElect

 4.1. Size:288K  fairchild semi
 huf76429d3-s.pdf pdf_icon

HUF76429D3S

HUF76429D3, HUF76429D3SData Sheet February 200520A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAIN- rDS(ON) = 0.023, VGS = 10VSOURCE (FLANGE)DRAIN- rDS(ON) = 0.027, VGS = 5VGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEElect

 5.1. Size:346K  fairchild semi
 huf76429d f085.pdf pdf_icon

HUF76429D3S

HUFA76429D3ST_F085 Data Sheet September 201020A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeatures Ultra Low On-ResistanceJEDEC TO-252AA- rDS(ON) = 0.023, VGS = 10V- rDS(ON) = 0.027, VGS = 5VDRAIN (FLANGE) Simulation Models- Temperature Compensated PSPICE and SABER Electriecal ModelsGATE- Spice and SABER Thermal Im

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Keywords - HUF76429D3S MOSFET datasheet

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