2SJ191 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ191
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 20 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 15 V
Maximum Drain Current |Id|: 2 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 18 nS
Drain-Source Capacitance (Cd): 150 pF
Maximum Drain-Source On-State Resistance (Rds): 0.45 Ohm
Package: TP
2SJ191 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ191 Datasheet (PDF)
1.1. 2sj191.pdf 
Size:89K _sanyo
Ordering number:EN3764A P-Channel Silicon MOSFET 2SJ191 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SJ191] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ191] 6.5 2.3 5.0 0.5 4 0.5 0.85 1
5.1. 2sj193.pdf Size:123K _sanyo
Ordering number:EN3766 P-Channel Silicon MOSFET 2SJ193 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SJ193] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 0.75 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol
5.2. 2sj195.pdf Size:122K _sanyo
Ordering number:EN3768A P-Channel Silicon MOSFET 2SJ195 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SJ195] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ195] 6.5 2.3 5.0 0.5 4 0.5 0.85 1
5.3. 2sj194.pdf Size:117K _sanyo
Ordering number:EN3767 P-Channel Silicon MOSFET 2SJ194 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SJ194] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ194] 6.5 2.3 5.0 0.5 4 0.5 0.85 1
5.4. 2sj190.pdf Size:93K _sanyo
Ordering number:EN3763 P-Channel Silicon MOSFET 2SJ190 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SJ190] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 0.75 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol
5.5. 2sj192.pdf Size:118K _sanyo
Ordering number:EN3765 P-Channel Silicon MOSFET 2SJ192 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SJ192] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ192] 6.5 2.3 5.0 0.5 4 0.5 0.85 1
5.6. 2sj199.pdf Size:308K _nec
5.7. 2sj197.pdf Size:301K _nec
5.8. 2sj196.pdf Size:386K _nec
5.9. 2sj198.pdf Size:343K _nec
5.10. 2sj199.pdf Size:1320K _kexin
SMD Type MOSFET P-Channel MOSFET 2SJ199 1.70 0.1 ■ Features ● VDS (V) =-100V ● ID =-1 A (VGS =-10V) 0.42 0.1 0.46 0.1 ● RDS(ON) ＜ 2Ω (VGS =-10V) ● RDS(ON) ＜ 2.5Ω (VGS =-4V) 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS ±20 Continuous Drain Current ID
5.11. 2sj197.pdf Size:1281K _kexin
SMD Type MOSFET P-Channel MOSFET 2SJ197 1.70 0.1 ■ Features ● VDS (V) =-60V ● ID =-1.5 A 0.42 0.1 0.46 0.1 ● RDS(ON) ＜ 1Ω (VGS =-10V) ● RDS(ON) ＜ 1.5Ω (VGS =-4V) ● Comp;ementary to 2SK1483 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 Continuou
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
