2SK1610 PDF and Equivalents Search

Power F-MOS FETs 2SK1610 2SK1610 Silicon N-Channel Power F-MOS Unit mm Features 15.0 0.5 4.5 0.2 High avalanche energy capability 13.0 0.5 10.5 0.5 2.0 0.1 VGSS 30V guaranteed Low RDS(on), high-speed switching characteristic 3.2 0.1 Applications High-speed switching (switching mode regulator) 2.0 0.2 For high-frequency power amplification 1.4 0.3 1.1 ... See More ⇒

isc N-Channel MOSFET Transistor 2SK1610 DESCRIPTION Drain Current I =13A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX... See More ⇒

2SK161 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK161 FM Tuner Applications Unit mm VHF Band Amplifier Applications Low noise figure NF = 2.5dB (typ.) (f = 100 MHz) High forward transfer admittance Y = 9 mS (typ.) fs Extremely low reverse transfer capacitance C = 0.1 pF (typ.) rss Maximum Ratings (Ta = = 25 C) = = Characteris... See More ⇒

Power F-MOS FETs 2SK1614 2SK1614 Silicon N-Channel Power F-MOS Unit mm Features 15.0 0.5 4.5 0.2 High avalanche energy capability 13.0 0.5 10.5 0.5 2.0 0.1 VGSS, 30V guaranteed Low RDS(on), high-speed switching characteristic 3.2 0.1 Applications High-speed switching (switching mode regulator) 2.0 0.2 For high-frequency power amplification 1.4 0.3 1.1 0... See More ⇒

Power F-MOS FETs 2SK1613 2SK1613 Silicon N-Channel Power F-MOS Unit mm Features 15.0 0.5 4.5 0.2 High avalanche energy capability 13.0 0.5 10.5 0.5 2.0 0.1 VGSS 30V guaranteed Low RDS(on), high-speed switching characteristic 3.2 0.1 Applications High-speed switching (switching mode regulator) 2.0 0.2 For high-frequency power amplification 1.4 0.3 1.1 ... See More ⇒

Power F-MOS FETs 2SK1612 2SK1612 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 High avalanche energy capability 5.5 0.2 2.7 0.2 VGSS 30V guaranteed Low RDS(on), high-speed switching characteristic 3.1 0.1 Applications High-speed switching (switching mode regulator) 1.3 0.2 1.4 0.1 For high-frequency power amplification +0.2 0.5 -0.1 0.8... See More ⇒

Power F-MOS FETs 2SK1611 2SK1611 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 High avalanche energy capability 5.5 0.2 2.7 0.2 VGSS 30V guaranteed Low RDS(on), high-speed switching characteristic 3.1 0.1 Applications High-speed switching (switching mode regulator, AC adaptor) 1.3 0.2 For high-frequency power amplification 1.4 0.1 +0.2 0... See More ⇒

2SK1618(L), 2SK1618(S) Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline LDPAK 4 4 1 2 3 1 2 3 D G 1. Gate 2. Drain 3. Source S 4. Drain 2SK1618(L), 2SK1618(S) Absolute Maximum Rating... See More ⇒

isc N-Channel MOSFET Transistor 2SK1614 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI... See More ⇒

isc N-Channel MOSFET Transistor 2SK1613 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI... See More ⇒

isc N-Channel MOSFET Transistor 2SK1612 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI... See More ⇒

isc N-Channel MOSFET Transistor 2SK1611 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI... See More ⇒