2SK1610 datasheet, подбор замены

 ..1. Size:36K  panasonic
 2sk1610.pdf 

Power F-MOS FETs 2SK1610 2SK1610 Silicon N-Channel Power F-MOS Unit mm Features 15.0 0.5 4.5 0.2 High avalanche energy capability 13.0 0.5 10.5 0.5 2.0 0.1 VGSS 30V guaranteed Low RDS(on), high-speed switching characteristic 3.2 0.1 Applications High-speed switching (switching mode regulator) 2.0 0.2 For high-frequency power amplification 1.4 0.3 1.1

 ..2. Size:216K  inchange semiconductor
 2sk1610.pdf 

isc N-Channel MOSFET Transistor 2SK1610 DESCRIPTION Drain Current I =13A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX

 8.1. Size:366K  toshiba
 2sk161.pdf 

2SK161 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK161 FM Tuner Applications Unit mm VHF Band Amplifier Applications Low noise figure NF = 2.5dB (typ.) (f = 100 MHz) High forward transfer admittance Y = 9 mS (typ.) fs Extremely low reverse transfer capacitance C = 0.1 pF (typ.) rss Maximum Ratings (Ta = = 25 C) = = Characteris

 8.2. Size:36K  panasonic
 2sk1614.pdf 

Power F-MOS FETs 2SK1614 2SK1614 Silicon N-Channel Power F-MOS Unit mm Features 15.0 0.5 4.5 0.2 High avalanche energy capability 13.0 0.5 10.5 0.5 2.0 0.1 VGSS, 30V guaranteed Low RDS(on), high-speed switching characteristic 3.2 0.1 Applications High-speed switching (switching mode regulator) 2.0 0.2 For high-frequency power amplification 1.4 0.3 1.1 0

 8.3. Size:36K  panasonic
 2sk1613.pdf 

Power F-MOS FETs 2SK1613 2SK1613 Silicon N-Channel Power F-MOS Unit mm Features 15.0 0.5 4.5 0.2 High avalanche energy capability 13.0 0.5 10.5 0.5 2.0 0.1 VGSS 30V guaranteed Low RDS(on), high-speed switching characteristic 3.2 0.1 Applications High-speed switching (switching mode regulator) 2.0 0.2 For high-frequency power amplification 1.4 0.3 1.1

 8.4. Size:36K  panasonic
 2sk1612.pdf 

Power F-MOS FETs 2SK1612 2SK1612 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 High avalanche energy capability 5.5 0.2 2.7 0.2 VGSS 30V guaranteed Low RDS(on), high-speed switching characteristic 3.1 0.1 Applications High-speed switching (switching mode regulator) 1.3 0.2 1.4 0.1 For high-frequency power amplification +0.2 0.5 -0.1 0.8

 8.5. Size:36K  panasonic
 2sk1611.pdf 

Power F-MOS FETs 2SK1611 2SK1611 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 High avalanche energy capability 5.5 0.2 2.7 0.2 VGSS 30V guaranteed Low RDS(on), high-speed switching characteristic 3.1 0.1 Applications High-speed switching (switching mode regulator, AC adaptor) 1.3 0.2 For high-frequency power amplification 1.4 0.1 +0.2 0

 8.6. Size:34K  hitachi
 2sk1618.pdf 

2SK1618(L), 2SK1618(S) Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline LDPAK 4 4 1 2 3 1 2 3 D G 1. Gate 2. Drain 3. Source S 4. Drain 2SK1618(L), 2SK1618(S) Absolute Maximum Rating

 8.7. Size:217K  inchange semiconductor
 2sk1614.pdf 

isc N-Channel MOSFET Transistor 2SK1614 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI

 8.8. Size:214K  inchange semiconductor
 2sk1613.pdf 

isc N-Channel MOSFET Transistor 2SK1613 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI

 8.9. Size:207K  inchange semiconductor
 2sk1612.pdf 

isc N-Channel MOSFET Transistor 2SK1612 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI

 8.10. Size:192K  inchange semiconductor
 2sk1611.pdf 

isc N-Channel MOSFET Transistor 2SK1611 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI