All MOSFET. 2SK1612 Datasheet

 

2SK1612 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK1612

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 90 pF

Maximum Drain-Source On-State Resistance (Rds): 5 Ohm

Package: TO220

2SK1612 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK1612 Datasheet (PDF)

1.1. 2sk1612.pdf Size:36K _panasonic

2SK1612
2SK1612

Power F-MOS FETs 2SK1612 2SK1612 Silicon N-Channel Power F-MOS Unit : mm Features 10.0 0.2 4.2 0.2 High avalanche energy capability 5.5 0.2 2.7 0.2 VGSS : 30V guaranteed Low RDS(on), high-speed switching characteristic o3.1 0.1 Applications High-speed switching (switching mode regulator) 1.3 0.2 1.4 0.1 For high-frequency power amplification +0.2 0.5 -0.1 0.8 0.1 Abs

4.1. 2sk161.pdf Size:366K _toshiba

2SK1612
2SK1612

2SK161 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK161 FM Tuner Applications Unit: mm VHF Band Amplifier Applications • Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) • High forward transfer admittance: |Y | = 9 mS (typ.) fs • Extremely low reverse transfer capacitance: C = 0.1 pF (typ.) rss Maximum Ratings (Ta = = 25°C) = = Characteris

4.2. 2sk1611.pdf Size:36K _panasonic

2SK1612
2SK1612

Power F-MOS FETs 2SK1611 2SK1611 Silicon N-Channel Power F-MOS Unit : mm Features 10.0 0.2 4.2 0.2 High avalanche energy capability 5.5 0.2 2.7 0.2 VGSS : 30V guaranteed Low RDS(on), high-speed switching characteristic o3.1 0.1 Applications High-speed switching (switching mode regulator, AC adaptor) 1.3 0.2 For high-frequency power amplification 1.4 0.1 +0.2 0.5 -0.1 A

 4.3. 2sk1613.pdf Size:36K _panasonic

2SK1612
2SK1612

Power F-MOS FETs 2SK1613 2SK1613 Silicon N-Channel Power F-MOS Unit : mm Features 15.0 0.5 4.5 0.2 High avalanche energy capability 13.0 0.5 10.5 0.5 2.0 0.1 VGSS : 30V guaranteed Low RDS(on), high-speed switching characteristic o3.2 0.1 Applications High-speed switching (switching mode regulator) 2.0 0.2 For high-frequency power amplification 1.4 0.3 1.1 0.1 Absolut

4.4. 2sk1614.pdf Size:36K _panasonic

2SK1612
2SK1612

Power F-MOS FETs 2SK1614 2SK1614 Silicon N-Channel Power F-MOS Unit : mm Features 15.0 0.5 4.5 0.2 High avalanche energy capability 13.0 0.5 10.5 0.5 2.0 0.1 VGSS, 30V guaranteed Low RDS(on), high-speed switching characteristic o3.2 0.1 Applications High-speed switching (switching mode regulator) 2.0 0.2 For high-frequency power amplification 1.4 0.3 1.1 0.1 Absolute

 4.5. 2sk1610.pdf Size:36K _panasonic

2SK1612
2SK1612

Power F-MOS FETs 2SK1610 2SK1610 Silicon N-Channel Power F-MOS Unit : mm Features 15.0 0.5 4.5 0.2 High avalanche energy capability 13.0 0.5 10.5 0.5 2.0 0.1 VGSS : 30V guaranteed Low RDS(on), high-speed switching characteristic o3.2 0.1 Applications High-speed switching (switching mode regulator) 2.0 0.2 For high-frequency power amplification 1.4 0.3 1.1 0.1 Absolut

4.6. 2sk1618.pdf Size:34K _hitachi

2SK1612
2SK1612

2SK1618(L), 2SK1618(S) Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline LDPAK 4 4 1 2 3 1 2 3 D G 1. Gate 2. Drain 3. Source S 4. Drain 2SK1618(L), 2SK1618(S) Absolute Maximum Ratings (Ta = 25C)

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
Back to Top