2SJ233 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ233
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.5 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 15 V
Maximum Drain Current |Id|: 1.8 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 22 nS
Drain-Source Capacitance (Cd): 200 pF
Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm
Package: FLP
2SJ233 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ233 Datasheet (PDF)
1.1. 2sj233.pdf 
Size:88K _sanyo
Ordering number:EN3818 P-Channel Silicon MOSFET 2SJ233 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2085A Low-voltage drive. [2SJ233] 4.5 Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 : Source 2 : Drain 3 : Gate 2.5 2.5 SANYO : FLP S
5.1. 2sj239.pdf Size:152K _upd
5.2. 2sj234s-l.pdf Size:54K _upd
2SJ234(L), 2SJ234(S) Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device Can be driven from 5 V source • Suitable for DC-DC converter, motor drive, power switch, solenoid drive Outline DPAK-1 4 4 1 2 3 1 2 3 D 1. Gate G 2. Drain 3.
5.3. 2sj238.pdf Size:329K _toshiba
5.4. 2sj232.pdf Size:88K _sanyo
Ordering number:EN3817 P-Channel Silicon MOSFET 2SJ232 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2085A Low-voltage drive. [2SJ232] 4.5 Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 : Source 2 : Drain 3 : Gate 2.5 2.5 SANYO : FLP S
5.5. 2sj230.pdf Size:88K _sanyo
Ordering number:EN3815 P-Channel Silicon MOSFET 2SJ230 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2085A Low-voltage drive. [2SJ230] 4.5 Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 : Source 2 : Drain 3 : Gate 2.5 2.5 SANYO : FLP S
5.6. 2sj231.pdf Size:86K _sanyo
Ordering number:EN3816 P-Channel Silicon MOSFET 2SJ231 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2087A Low-voltage drive. [2SJ231] 2.5 Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 : Source 2 : Drain 3 : Gate 2.54 2.54 SANYO : NMP Specifications Absolute Maximum Ratings
Datasheet: IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .
LIST
Last Update
MOSFET: CS5210PBF | CS5210 | CS520 | CS5103 | CS50N80 | CS50N06D | CS50N06 | CS4N70FA9D | CS4N70ARHD | CS4N65F | CS4N65A8HD | CS4N65A4TDY | CS4N65A4HDY | CS4N65A3TDY | CS4N65A3HDY |