2SJ288 MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SJ288
Marking Code: JE
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 1.3 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 15 V
Minimum Gate-to-Source Cutoff Voltage |Vgs(off)|: 1 V
Maximum Drain Current |Id|: 0.5 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 20 pF
Maximum Drain-Source On-State Resistance (Rds): 3 Ohm
Package: PCP
2SJ288 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SJ288 Datasheet (PDF)
2sj288.pdf
Ordering number:EN4308P-Channel Silicon MOSFET2SJ288Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SJ288]4.51.51.60.40.53 2 10.41.51 : Gate3.02 : Drain0.753 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 2
2sj288.pdf
SMD Type MOSFETP-Channel MOSFET2SJ2881.70 0.1 Features VDS (V) =-60V ID =-0.5 A0.42 0.10.46 0.1 RDS(ON) 3 (VGS =-10V) RDS(ON) 4 (VGS =-4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gate-Source Voltage VGS 15 Continuous Drain Current ID -0.5A Puls
2sj284.pdf
Ordering number:EN4220P-Channel Silicon MOSFET2SJ284Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2091A Low-voltage drive.[2SJ284]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Sym
2sj289.pdf
Ordering number : ENN66092SJ289P-Channel Silicon MOSFET2SJ289Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2062A Low-voltage drive.[2SJ289]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.75 2 : Drain3 : SourceSpecificationsSANYO : PCPAbsolute Maximum Ratings at Ta=25CPa
2sj281.pdf
Ordering number:EN4243AP-Channel Silicon MOSFET2SJ281Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SJ281]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SJ281]6.5 2.35.0 0.540.50
2sj287.pdf
Ordering number:EN4307P-Channel Silicon MOSFET2SJ287Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SJ287]4.51.51.60.4 0.53 2 10.41.51 : Gate3.02 : Drain0.753 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25
2sj285.pdf
Ordering number:EN4221P-Channel Silicon MOSFET2SJ285Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2091A Low-voltage drive.[2SJ285]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Sym
2sj280l-s.pdf
2SJ280 L , 2SJ280 SSilicon P Channel MOS FETApplicationLDPAKHigh speed power switching44Features1 Low onresistance 21 3 High speed switching 232, 4 Low drive current 4 V gate drive device can be driven from15 V source1. Gate Suitable for Switching regulator, DC DC 2. Drainconverter3. Source Avalanche Ratings4. Drain3Ta
2sj287.pdf
SMD Type MOSFETP-Channel MOSFET2SJ2871.70 0.1 Features VDS (V) =-30V ID =-500m A0.42 0.10.46 0.1 RDS(ON) 2.2 (VGS =-10V) RDS(ON) 3.3 (VGS =-4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30V Gate-Source Voltage VGS 15 Continuous Drain Current ID -0.5A
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