Справочник MOSFET. 2SJ288

 

2SJ288 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SJ288
   Маркировка: JE
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 15 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 1 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 20 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm
   Тип корпуса: PCP

 Аналог (замена) для 2SJ288

 

 

2SJ288 Datasheet (PDF)

 ..1. Size:99K  sanyo
 2sj288.pdf

2SJ288 2SJ288

Ordering number:EN4308P-Channel Silicon MOSFET2SJ288Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SJ288]4.51.51.60.40.53 2 10.41.51 : Gate3.02 : Drain0.753 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 2

 ..2. Size:1053K  kexin
 2sj288.pdf

2SJ288 2SJ288

SMD Type MOSFETP-Channel MOSFET2SJ2881.70 0.1 Features VDS (V) =-60V ID =-0.5 A0.42 0.10.46 0.1 RDS(ON) 3 (VGS =-10V) RDS(ON) 4 (VGS =-4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gate-Source Voltage VGS 15 Continuous Drain Current ID -0.5A Puls

 9.1. Size:81K  sanyo
 2sj284.pdf

2SJ288 2SJ288

Ordering number:EN4220P-Channel Silicon MOSFET2SJ284Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2091A Low-voltage drive.[2SJ284]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Sym

 9.2. Size:41K  sanyo
 2sj289.pdf

2SJ288 2SJ288

Ordering number : ENN66092SJ289P-Channel Silicon MOSFET2SJ289Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2062A Low-voltage drive.[2SJ289]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.75 2 : Drain3 : SourceSpecificationsSANYO : PCPAbsolute Maximum Ratings at Ta=25CPa

 9.3. Size:93K  sanyo
 2sj281.pdf

2SJ288 2SJ288

Ordering number:EN4243AP-Channel Silicon MOSFET2SJ281Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SJ281]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SJ281]6.5 2.35.0 0.540.50

 9.4. Size:96K  sanyo
 2sj287.pdf

2SJ288 2SJ288

Ordering number:EN4307P-Channel Silicon MOSFET2SJ287Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SJ287]4.51.51.60.4 0.53 2 10.41.51 : Gate3.02 : Drain0.753 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25

 9.5. Size:106K  sanyo
 2sj285.pdf

2SJ288 2SJ288

Ordering number:EN4221P-Channel Silicon MOSFET2SJ285Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2091A Low-voltage drive.[2SJ285]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Sym

 9.6. Size:121K  hitachi
 2sj280l-s.pdf

2SJ288 2SJ288

2SJ280 L , 2SJ280 SSilicon P Channel MOS FETApplicationLDPAKHigh speed power switching44Features1 Low onresistance 21 3 High speed switching 232, 4 Low drive current 4 V gate drive device can be driven from15 V source1. Gate Suitable for Switching regulator, DC DC 2. Drainconverter3. Source Avalanche Ratings4. Drain3Ta

 9.7. Size:1039K  kexin
 2sj287.pdf

2SJ288 2SJ288

SMD Type MOSFETP-Channel MOSFET2SJ2871.70 0.1 Features VDS (V) =-30V ID =-500m A0.42 0.10.46 0.1 RDS(ON) 2.2 (VGS =-10V) RDS(ON) 3.3 (VGS =-4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30V Gate-Source Voltage VGS 15 Continuous Drain Current ID -0.5A

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top