Справочник MOSFET. 2SJ288

 

2SJ288 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SJ288

Маркировка: JE

Тип транзистора: MOSFET

Полярность: P

Максимальная рассеиваемая мощность (Pd): 1.3 W

Предельно допустимое напряжение сток-исток (Uds): 60 V

Предельно допустимое напряжение затвор-исток (Ugs): 15 V

Максимально допустимый постоянный ток стока (Id): 0.5 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 10 ns

Выходная емкость (Cd): 20 pf

Сопротивление сток-исток открытого транзистора (Rds): 3 Ohm

Тип корпуса: PCP

Аналог (замена) для 2SJ288

 

 

2SJ288 Datasheet (PDF)

1.1. 2sj288.pdf Size:99K _sanyo

2SJ288
2SJ288

Ordering number:EN4308 P-Channel Silicon MOSFET 2SJ288 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SJ288] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 1 : Gate 3.0 2 : Drain 0.75 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C P

1.2. 2sj288.pdf Size:1053K _kexin

2SJ288
2SJ288

SMD Type MOSFET P-Channel MOSFET 2SJ288 1.70 0.1 ■ Features ● VDS (V) =-60V ● ID =-0.5 A 0.42 0.1 0.46 0.1 ● RDS(ON) < 3Ω (VGS =-10V) ● RDS(ON) < 4Ω (VGS =-4V) 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±15 Continuous Drain Current ID -0.5 A Puls

 5.1. 2sj284.pdf Size:81K _sanyo

2SJ288
2SJ288

Ordering number:EN4220 P-Channel Silicon MOSFET 2SJ284 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2091A Low-voltage drive. [2SJ284] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 : Gate 2 : Source 3 : Drain SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Con

5.2. 2sj289.pdf Size:41K _sanyo

2SJ288
2SJ288

Ordering number : ENN6609 2SJ289 P-Channel Silicon MOSFET 2SJ289 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SJ289] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 0.75 2 : Drain 3 : Source Specifications SANYO : PCP Absolute Maximum Ratings at Ta=25C Parameter Sy

 5.3. 2sj281.pdf Size:93K _sanyo

2SJ288
2SJ288

Ordering number:EN4243A P-Channel Silicon MOSFET 2SJ281 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SJ281] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ281] 6.5 2.3 5.0 0.5 4 0.5 0.85 1

5.4. 2sj285.pdf Size:106K _sanyo

2SJ288
2SJ288

Ordering number:EN4221 P-Channel Silicon MOSFET 2SJ285 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2091A Low-voltage drive. [2SJ285] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 : Gate 2 : Source 3 : Drain SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Con

 5.5. 2sj287.pdf Size:96K _sanyo

2SJ288
2SJ288

Ordering number:EN4307 P-Channel Silicon MOSFET 2SJ287 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SJ287] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 1 : Gate 3.0 2 : Drain 0.75 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Pa

5.6. 2sj280l-s.pdf Size:121K _hitachi

2SJ288
2SJ288

2SJ280 L , 2SJ280 S Silicon P Channel MOS FET Application LDPAK High speed power switching 4 4 Features 1 • Low on–resistance 2 1 3 • High speed switching 2 3 2, 4 • Low drive current • 4 V gate drive device can be driven from 1 5 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source • Avalanche Ratings 4. Drain 3 Ta

5.7. 2sj287.pdf Size:1039K _kexin

2SJ288
2SJ288

SMD Type MOSFET P-Channel MOSFET 2SJ287 1.70 0.1 ■ Features ● VDS (V) =-30V ● ID =-500m A 0.42 0.1 0.46 0.1 ● RDS(ON) < 2.2Ω (VGS =-10V) ● RDS(ON) < 3.3Ω (VGS =-4V) 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±15 Continuous Drain Current ID -0.5 A

Другие MOSFET... PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 , SI2305 , XP152A12COMR , IRFBC40 , AO3407 , PT4435 , SM103 , SM104 , SMY50 , SMY51 , SMY52 , SMY60 .

 

 

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MOSFET: KO3407 | KO3404 | KO3403 | KO3402 | KN0606L | KML0D4P20E | KML0D4N20E | KMDF2C03HD | KMB075N75P | KI7540DP | KI6968BEDQ | KI5P03DY | KI5935DC | KI5908DC | KI5905DC |
 

 

 

 
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