All MOSFET. 2SJ561 Datasheet

 

2SJ561 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SJ561
   Marking Code: J_JM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: PCP

 2SJ561 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SJ561 Datasheet (PDF)

 ..1. Size:159K  sanyo
 2sj561.pdf

2SJ561 2SJ561

Ordering number:ENN6095AP-Channel Silicon MOSFET2SJ561Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2062A 4V drive.[2SJ561]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25CPa

 9.1. Size:361K  toshiba
 2sj567.pdf

2SJ561 2SJ561

2SJ567 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (-MOSV) 2SJ567 Industrial Applications Switching Applications Unit: mm Chopper Regulator, DC-DC Converter and Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 1.6 (typ.) High forward transfer admittance: |Y | = 2.0 S (typ.) fs Low leakage current: I = -100 A (max) (V =

 9.2. Size:147K  sanyo
 2sj562.pdf

2SJ561 2SJ561

Ordering number:ENN6096AP-Channel Silicon MOSFET2SJ562Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2062A 2.5V drive.[2SJ562]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25C

 9.3. Size:140K  sanyo
 2sj563.pdf

2SJ561 2SJ561

Ordering number:ENN6097AP-Channel Silicon MOSFET2SJ563Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2062A 4V drive.[2SJ563]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.752 : Drain3 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25CPa

 9.4. Size:184K  sanyo
 2sj560.pdf

2SJ561 2SJ561

Ordering number:ENN6120AP-Channel Silicon MOSFET2SJ560Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2157 2.5V drive.[2SJ560]4.51.51.60.4 0.53 2 10.41.53.01 : Gate2 : Drain0.753 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25CP

 9.5. Size:29K  sanyo
 2sj569ls.pdf

2SJ561 2SJ561

Ordering number : ENN68982SJ569LSP-Channel Silicon MOSFET2SJ569LSUltrahigh-Speed Switching ApplicationsFeaturesPackage Dimensions Low ON-resistance.unit : mm Ultrahigh-speed switching.2078B[2SJ569]4.510.02.83.20.91.20.70.751 : Gate1 2 32 : Drain3 : Source2.55 2.55SANYO : TO-220FI-LSSpecificationsAbsolute Maximum Ratings at Ta=25CPa

 9.6. Size:833K  cn vbsemi
 2sj562.pdf

2SJ561 2SJ561

2SJ562www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.056 at VGS = - 4.5 V - 6.0APPLICATIONS Load Switch Battery SwitchDS G G D SD P-Channel MOSFET ABSOL

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: IXFH15N100

 

 
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