All MOSFET. 2N7002KB Datasheet

 

2N7002KB MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N7002KB

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.63 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 0.3 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 16.6 pF

Maximum Drain-Source On-State Resistance (Rds): 2 Ohm

Package: SOT23

2N7002KB Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N7002KB Datasheet (PDF)

1.1. 2n7002kb.pdf Size:502K _silikron

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 2N7002KB Main Product Characteristics: VDSS 60V RDS(on) 2Ω(max.) ID 0.3A Marking and pin SOT-23 Schema t ic diag r am Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery 

3.1. 2v7002k 2n7002k.pdf Size:64K _upd

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2N7002K, 2V7002K Small Signal MOSFET 60 V, 380 mA, Single, N-Channel, SOT-23 Features • ESD Protected • Low RDS(on) www.onsemi.com • Surface Mount Package • 2V Prefix for Automotive and Other Applications Requiring Unique V(BR)DSS RDS(on) MAX ID MAX Site and Control Change Requirements; AEC-Q101 Qualified and 1.6 W @ 10 V PPAP Capable 60 V 380 mA 2.5 W @ 4.5 V • These D

3.2. 2n7002ka.pdf Size:87K _philips

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2N7002KA N-channel TrenchMOS FET Rev. 03 — 25 February 2008 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level compatible Very fast switching Subminiature surface-mounted package Gate-source ElectroStatic Discharge (ESD) protection diodes 1.3

3.3. 2n7002k.pdf Size:222K _fairchild_semi

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January 2012 2N7002K N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=2000V (Typical:3000V) as per JESD22 A114 and ESD CDM=2000V as per JESD22 C101 D S G SOT-23 Marking : 7K Abso

3.4. 2n7002kw.pdf Size:286K _fairchild_semi

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May 2011 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101 D S SOT-323 G Marking : 7KW Absolute Maximum Rati

3.5. 2n7002k.pdf Size:210K _vishay

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2N7002K Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?)ID (mA) Definition 2 at VGS = 10 V 60 300 Low On-Resistance: 2 ? Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output Leakage TrenchFET Power MOSFET 2000 V ESD Protection

3.6. 2n7002k.pdf Size:161K _diodes

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2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-23 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminals: Finish ? Matte Tin annealed over Alloy 42

3.7. 2n7002k.pdf Size:159K _utc

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UNISONIC TECHNOLOGIES CO., LTD 2N7002K Preliminary Power MOSFET 300mA, 60V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. FEATURES * Low Reverse Transfer Capacitance (CRSS = t

3.8. 2n7002k.pdf Size:237K _auk

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2N7002K N-Channel Enhancement Mode MOSFET High Speed Switching Application Features ? ESD rating: 1000V (HBM) ? Low On-Resistance: RDS(on) < 3? @ VGS = 10V ? High power and current handling capability ? Very fast switching ? RoHS compliant device Applications SOT-23 ? High speed line driver Ordering Information Part Number Marking Code Package Packaging 2N7002K 7K2 ? SOT-

3.9. 2n7002ku.pdf Size:241K _auk

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2N7002KU N-Channel Enhancement Mode MOSFET High Speed Switching Application Features ? ESD rating: 1000V (HBM) ? Low On-Resistance: RDS(on) < 3? @ VGS = 10V ? High power and current handling capability ? Very fast switching ? RoHS compliant device Applications SOT-323 ? High speed line driver Ordering Information Part Number Marking Code Package Packaging 2N7002KU 7K2 ? S

3.10. 2n7002k.pdf Size:527K _secos

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2N7002K 0.3A , 60V , RDS(ON) 4 ? N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-23 ? RDS(ON), VGS@10V, IDS@500mA=3? ? RDS(ON), VGS@4.5V, IDS@200mA=4? A L ? Advanced Trench Process Technology 3 3 ? High Density Cell Design For Ultra Low On-Resistance Top View C

3.11. 2n7002kdw.pdf Size:425K _secos

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2N7002KDW 115mA, 60V Dual N-Channel Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 FEATURES A ? Low on-resistance E L ? Fast switching Speed 6 5 4 ? Low-voltage drive ? Easily designed drive circuits B ? ESD protected:2000V 1 2 3 F C H 6 5 4 MECHANICAL DATA J D2 G1 S1 D G K ? Case:

3.12. 2n7002kw.pdf Size:527K _secos

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2N7002KW 115mA , 60V, RDS(ON) 4 ? N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-323 ? RDS(ON), VGS@10V, IDS@500mA=3? ? RDS(ON), VGS@4.5V, IDS@200mA=4? A ? Advanced Trench Process Technology L ? High Density Cell Design For Ultra Low On-Resistance 3 3 ? Very Lo

3.13. s2n7002k.pdf Size:1005K _secos

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S2N7002K 115mA, 60V N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product SOT-23 A Suffix of “-C” specifies halogen & lead-free A L 3 3 Top View C B FEATURES 1 1 2 3 DRAIN 2 Low on resistance. K E Fast switching speed. D Low-voltage drive. 1 H J F G GATE * Easily designed drive circuits. Easy to parallel. *

3.14. s2n7002kw.pdf Size:536K _secos

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S2N7002KW 115mA, 60V N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES Low on-resistance Fast switching Speed A L Low-voltage drive 3 3 Easily designed drive circuits Top View C B 1 1 2 ESD protected:1500V 2 K E D H J F G Millimeter Millimeter REF. REF. Min

3.15. 2n7002k.pdf Size:68K _kec

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2N7002K SEMICONDUCTOR N Channel MOSFET TECHNICAL DATA ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES E L B L ESD Protected 2000V. DIM MILLIMETERS High density cell design for low RDS(ON). _ A + 2.93 0.20 B 1.30+0.20/-0.15 Voltage controlled small signal switch. C 1.30 MAX 2 3 Rugged and reliable. D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 High saturation current

3.16. 2n7002ka.pdf Size:552K _kec

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2N7002KA SEMICONDUCTOR N Channel MOSFET TECHNICAL DATA ESD Protected 2000V INTERFACE AND SWITCHING APPLICATION. FEATURES E L B L ·ESD Protected 2000V. DIM MILLIMETERS _ + ·High density cell design for low RDS(ON). A 2.93 0.20 B 1.30+0.20/-0.15 ·Voltage controlled small signal switch. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 ·Rugged and reliable. E 2.40+0.30/-0.20 1 G 1.90 ·Hig

3.17. 2n7002k.pdf Size:335K _wietron

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2N7002K N-Channel Enhancement 3 DRAIN Mode Power MOSFET 3 1 P b Lead(Pb)-Free 1 GATE * 2 * Gate Pretection Diode SOURCE 2 SOT-23 Features: * Low on-resistance. * Fast switching speed. * Low-voltage drive. * Easily designed drive circuits. * Easy to parallel. * Pb-Free package is available. * Esd Protected:2000V Maximum Ratings(T = 25? Unless Otherwise Specified) A Para

3.18. 2n7002kdw.pdf Size:161K _wietron

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2N7002KDW Dual N-Channel MOSFET 6 5 P b Lead(Pb)-Free 4 1 2 3 Features: * Low On-Resistance SOT-363(SC-88) * Fast Switching Speed * Low-voltage drive 6 5 4 * Easily designed drive circuits D2 G1 S1 * ESD Protected:2000V Mechanical Data: *Case: SOT-363, Molded Plastic *Case Material-UL Flammability Rating 94V-0 S2 G2 D1 *Terminals: Solderable per MIL-STD-202, Method 208 1 2 3

3.19. 2n7002kt.pdf Size:626K _wietron

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2N7002KT N-Channel ENHANCEMENT MODE POWER MOSFET 3 P b Lead(Pb)-Free 1 2 FEATURES: SC-89 * Gate-Source ESD Protected: 1500 V * Fast Switching Speed Drain * Low On-Resistance * Low Voltage Driver 3 APPLICATIONS: * Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories * Battery Operated Systems * Power Supply Converter Circuits 1 (Top View) 2 * Load/Power Switching Cell

3.20. h2n7002k.pdf Size:136K _hsmc

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Spec. No. : MOS200803 HI-SINCERITY Issued Date : 2005.03.13 Revised Date :2010,03,04 MICROELECTRONICS CORP. Page No. : 1/5 H2N7002K N-CHANNEL TRANSISTOR Description N-channel enhancement-mode MOS transistor. ESD protected Absolute Maximum Ratings Drain-Source Voltage ............................................................................................................

3.21. h2n7002ksn.pdf Size:156K _hsmc

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Spec. No. : MOS200809 HI-SINCERITY Issued Date : 2008.11.18 Revised Date :2010.04.14 MICROELECTRONICS CORP. Page No. : 1/4 H2N7002KSN Pin Assignment & Symbol 3 3-Lead Plastic SOT-323 H2N7002KSN Package Code: SN Pin 1: Gate 2: Source 3: Drain N-CHANNEL TRANSISTOR 2 1 Description N-channel enhancement-mode MOS transistor. ESD protected Absolute Maximum Ratings Drain-S

3.22. ap2n7002k-hf.pdf Size:58K _a-power

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AP2N7002K-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement BVDSS 60V D Ў Small Package Outline RDS(ON) 2? Ў Surface Mount Device ID 450mA S Ў RoHS Compliant & Halogen-Free SOT-23 G Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, ex

3.23. ap2n7002ku.pdf Size:100K _a-power

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AP2N7002KU Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 60V D ▼ Small Package Outline RDS(ON) 2Ω ▼ Surface Mount Device ID 270mA S ▼ RoHS Compliant & Halogen-Free SOT-323 G D Description AP2N7002 series are from Advanced Power innovated design G and silicon process technology to achieve th

3.24. 2n7002kg8.pdf Size:459K _silikron

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 2N7002KG8 Main Product Characteristics: VDSS 60V RDS(on) 7.5ohm(max.) ID A SOT-363 Sc he mat i c d ia gra m Features and Benefits:  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating t

3.25. 2n7002k.pdf Size:1191K _kexin

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SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002K SOT-23 Unit: mm +0.1 2.9 -0.1 Features +0.1 0.4 -0.1 3 Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance D rai n 1 2 Fast Switching Speed +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 Low Input/Output Leakage ● ESD Protected 2KV HBM Gate 1.Base 1 GATE 2.Emitter 2 SOURCE Gate Protectio

3.26. 2n7002k-3.pdf Size:1213K _kexin

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SMD Type MOSFET N-Channel Enhancement MOSFET 2N7002K SOT-23-3 Unit: mm +0.2 2.9-0.1 +0.1 0.4 -0.1 Features 3 Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance 1 2 D rai n +0.02 +0.1 0.15 -0.02 0.95 -0.1 Fast Switching Speed +0.1 1.9-0.2 Low Input/Output Leakage ● ESD Protected 2KV HBM Gate 1.Base 1 GATE 2.Emitter 2 SOURCE Gate Protect

3.27. 2n7002k.pdf Size:814K _shenzhen-tuofeng-semi

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2N7002K N-Channel High Density Trench MOSFET (60V, 0.5A) PRODUCT SUMMARY VDSS ID RDS(on) (ohm) Max 3 @ VGS = 10V, ID=0.5A 60V 0.5A 5 @ VGS = 5V, ID=0.05A Features · Low On-Resistance · Low Input Capacitance · Fast Switching Speed · Low Input/Output Leakage · ESD Protected Up To 2KV 2N7002K Pin Assignment & Symbol

Datasheet: 2SJ577 , 2SJ578 , 2SJ579 , 2SJ580 , 2SJ583LS , 2SJ584LS , 2SJ585LS , 2SJ589LS , STP75NF75 , 2N7002KG8 , SSF0115 , SSF1006 , SSF1006A , SSF1006H , SSF1007 , SSF1009 , SSF1010 .

 


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