SSF1006H Specs and Replacement

Type Designator: SSF1006H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 690 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO247

SSF1006H substitution

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SSF1006H datasheet

 ..1. Size:464K  silikron
ssf1006h.pdf pdf_icon

SSF1006H

SSF1006H Main Product Characteristics VDSS 100V RDS(on) 5m (typ.) ID 200A Marking a nd p in TO-247 Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery ... See More ⇒

 7.1. Size:672K  silikron
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SSF1006H

SSF1006 Main Product Characteristics VDSS 100V RDS(on) 4.6m (typ.) ID 200A Mar ki ng a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body... See More ⇒

 7.2. Size:921K  silikron
ssf1006a.pdf pdf_icon

SSF1006H

SSF1006A Feathers ID =200A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=4.7m Typ. Fully characterized avalanche voltage and current Description The SSF1006A is a new generation of high voltage and low current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electri... See More ⇒

 8.1. Size:659K  silikron
ssf1009.pdf pdf_icon

SSF1006H

SSF1009 Main Product Characteristics VDSS 100V RDS(on) 7.2mohm(typ.) ID 100A Ma r k ing an d pin Sche ma ti c di agr a m TO220 Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body rec... See More ⇒

Detailed specifications: 2SJ584LS, 2SJ585LS, 2SJ589LS, 2N7002KB, 2N7002KG8, SSF0115, SSF1006, SSF1006A, IRFP450, SSF1007, SSF1009, SSF1010, SSF1010A, SSF1016, SSF1016A, SSF1016D, SSF1020

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.