Справочник MOSFET. SSF1006H

 

SSF1006H Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: SSF1006H
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 500 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 200 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 27 ns
   Cossⓘ - Выходная емкость: 690 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm
   Тип корпуса: TO247
 

 Аналог (замена) для SSF1006H

   - подбор ⓘ MOSFET транзистора по параметрам

 

SSF1006H Datasheet (PDF)

 ..1. Size:464K  silikron
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SSF1006H

SSF1006H Main Product Characteristics: VDSS 100V RDS(on) 5m (typ.) ID 200A Marking a nd p in TO-247 Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 7.1. Size:672K  silikron
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SSF1006H

SSF1006 Main Product Characteristics: VDSS 100V RDS(on) 4.6m (typ.) ID 200A Mar ki ng a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body

 7.2. Size:921K  silikron
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SSF1006H

SSF1006A Feathers: ID =200A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=4.7m Typ. Fully characterized avalanche voltage and current Description: The SSF1006A is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electri

 8.1. Size:659K  silikron
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SSF1006H

SSF1009 Main Product Characteristics: VDSS 100V RDS(on) 7.2mohm(typ.) ID 100A Ma r k ing an d pin Sche ma ti c di agr a m TO220 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body rec

Другие MOSFET... 2SJ584LS , 2SJ585LS , 2SJ589LS , 2N7002KB , 2N7002KG8 , SSF0115 , SSF1006 , SSF1006A , IRF1407 , SSF1007 , SSF1009 , SSF1010 , SSF1010A , SSF1016 , SSF1016A , SSF1016D , SSF1020 .

History: SST60R280S2E | NCE60NF420 | BUZ330 | IRF522FI | TJ200F04M3L | NTB190N65S3HF | SML3520AN

 

 
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