SSF18N50F Specs and Replacement

Type Designator: SSF18N50F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80.3 nS

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: TO220F

SSF18N50F substitution

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SSF18N50F datasheet

 ..1. Size:379K  silikron
ssf18n50f.pdf pdf_icon

SSF18N50F

SSF18N50F Main Product Characteristics VDSS 500V RDS(on) 0.22ohm(typ.) ID 18A Marking and pin TO220F Schematic diagram Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 operating... See More ⇒

 8.1. Size:512K  silikron
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SSF18N50F

SSF18NS60F Main Product Characteristics VDSS 610V RDS(on) 0.27ohm(typ.) ID 15A Marking and pin TO220F Schematic diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF18NS60F series MOSFETs is a new technology, whic... See More ⇒

 8.2. Size:607K  silikron
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SSF18N50F

SSF18NS60 Main Product Characteristics VDSS 610V RDS(on) 0.27 (typ.) ID 15A Marking a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF18NS60 series MOSFETs is a new technology... See More ⇒

Detailed specifications: SSF1341, SSF13N50, SSF13N50F, SSF1502D, SSF1502G5, SSF1504D, SSF1526, SSF1530, IRF740, SSF18NS60, SSF18NS60F, SSF1N80D, SSF1N80G5, SSF1N90D, SSF20N50UH, SSF20N60H, SSF20NS60

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