All MOSFET. SSF2116EJ3 Datasheet

 

SSF2116EJ3 Datasheet and Replacement


   Type Designator: SSF2116EJ3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 8.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0175 Ohm
   Package: DFN2X5-6L-EP
 

 SSF2116EJ3 substitution

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SSF2116EJ3 Datasheet (PDF)

 ..1. Size:347K  silikron
ssf2116ej3.pdf pdf_icon

SSF2116EJ3

SSF2116EJ3 Main Product Characteristics: VDSS 20V RDS(on) 14.5mohmtyp.ID 8.5A DFN2X5-6L-EP Marking and pin Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov

 8.1. Size:634K  silikron
ssf2112h2.pdf pdf_icon

SSF2116EJ3

SSF2112H2Main Product Characteristics: D1D2VDSS 20V D1 D2S1 S2G1 G22112H28205AS1 S2G1 G2 RDS(on) 10mohm(typ.)S1 S2ID 8A Marking and pin Schematic diagramTSSOP-8AssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-re

 9.1. Size:280K  silikron
ssf2145ch6.pdf pdf_icon

SSF2116EJ3

SSF2145CH6 Main Product Characteristics: n-ch p-ch VDSS 20V -20V RDSon(typ.) 38mohm 64mohm Marking and pin TSOP-6 Schematic diagram ID 4.8A 2.9A Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for load switching and buttery protection applications 150 operating temperature Description: It utilizes the l

 9.2. Size:545K  silikron
ssf2129h3.pdf pdf_icon

SSF2116EJ3

SSF2129H3 Main Product Characteristics: VDSS -20V D1D2G1 G2 RDS(on) 21m (typ.) S1 S2ID -6.0A Marking and pin SOP-8 S che matic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and re

Datasheet: SSF1N90D , SSF20N50UH , SSF20N60H , SSF20NS60 , SSF20NS60F , SSF20NS65 , SSF20NS65F , SSF2112H2 , 10N60 , SSF2122E , SSF2129H3 , SSF2145CH6 , SSF2160G4 , SSF2300 , SSF2300A , SSF2300B , SSF2301 .

History: PMDT290UNE | STV250N55F3 | CS740FA9H | UTT6NP10G-S08-R | SIA537EDJ | NVMFS5C460N | QM2N7002E3K1

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