SSF2116EJ3 - параметры транзистора MOSFET, его аналоги, datasheet

SSF2116EJ3 Datasheet (PDF)

..1. Size:347K silikron
ssf2116ej3.pdf pdf_icon

SSF2116EJ3 Main Product Characteristics: VDSS 20V RDS(on) 14.5mohmtyp.ID 8.5A DFN2X5-6L-EP Marking and pin Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov

8.1. Size:634K silikron
ssf2112h2.pdf pdf_icon

SSF2112H2Main Product Characteristics: D1D2VDSS 20V D1 D2S1 S2G1 G22112H28205AS1 S2G1 G2 RDS(on) 10mohm(typ.)S1 S2ID 8A Marking and pin Schematic diagramTSSOP-8AssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-re

9.1. Size:280K silikron
ssf2145ch6.pdf pdf_icon

SSF2145CH6 Main Product Characteristics: n-ch p-ch VDSS 20V -20V RDSon(typ.) 38mohm 64mohm Marking and pin TSOP-6 Schematic diagram ID 4.8A 2.9A Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for load switching and buttery protection applications 150 operating temperature Description: It utilizes the l

9.2. Size:545K silikron
ssf2129h3.pdf pdf_icon

SSF2129H3 Main Product Characteristics: VDSS -20V D1D2G1 G2 RDS(on) 21m (typ.) S1 S2ID -6.0A Marking and pin SOP-8 S che matic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and re