SSF2312 Specs and Replacement

Type Designator: SSF2312

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm

Package: SOT23

SSF2312 substitution

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SSF2312 datasheet

 ..1. Size:281K  silikron
 ssf2312.pdf pdf_icon

SSF2312

SSF2312 D DESCRIPTION The SSF2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES D VDS = 20V,ID = 4.5A 3 RDS(ON) ... See More ⇒

 8.1. Size:229K  silikron
 ssf2314.pdf pdf_icon

SSF2312

SSF2314 D DESCRIPTION The SSF2314 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 0.65V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES V = 20V,I = 4.5A DS D R ... See More ⇒

 8.2. Size:200K  silikron
 ssf2316e.pdf pdf_icon

SSF2312

SSF2316E GENERAL FEATURES VDS = 20V,ID = 7A RDS(ON) ... See More ⇒

 8.3. Size:341K  silikron
 ssf2318e.pdf pdf_icon

SSF2312

SSF2318E DESCRIPTION The SSF2318E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID =6.5A Schematic diagram RDS(ON) ... See More ⇒

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Detailed specifications: SSF2300B, SSF2301, SSF2301A, SSF2301B, SSF2302, SSF2305, SSF2306, SSF2307B, 2SK3878, SSF2314, SSF2316E, SSF2318E, SSF2336, SSF2341E, SSF2356G8, SSF2418E, SSF2418EB

Keywords - SSF2312 MOSFET specs

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