All MOSFET. SSF2312 Datasheet

 

SSF2312 Datasheet and Replacement


   Type Designator: SSF2312
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: SOT23
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SSF2312 Datasheet (PDF)

 ..1. Size:281K  silikron
 ssf2312.pdf pdf_icon

SSF2312

SSF2312DDESCRIPTION The SSF2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES D VDS = 20V,ID = 4.5A 3RDS(ON)

 8.1. Size:229K  silikron
 ssf2314.pdf pdf_icon

SSF2312

SSF2314 DDESCRIPTION The SSF2314 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 0.65V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES V = 20V,I = 4.5A DS DR

 8.2. Size:200K  silikron
 ssf2316e.pdf pdf_icon

SSF2312

SSF2316E GENERAL FEATURES VDS = 20V,ID = 7A RDS(ON)

 8.3. Size:341K  silikron
 ssf2318e.pdf pdf_icon

SSF2312

SSF2318EDESCRIPTION The SSF2318E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID =6.5A Schematic diagram RDS(ON)

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Keywords - SSF2312 MOSFET datasheet

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