All MOSFET. SSF2N60G Datasheet

 

SSF2N60G Datasheet and Replacement


   Type Designator: SSF2N60G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 6.9 nS
   Cossⓘ - Output Capacitance: 39 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
   Package: TO251
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SSF2N60G Datasheet (PDF)

 ..1. Size:451K  silikron
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SSF2N60G

SSF2N60G Main Product Characteristics: VDSS 600V RDS(on) 3.5 (typ.) ID 2A TO-251 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 7.1. Size:428K  silikron
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SSF2N60G

SSF2N60Main Product Characteristics: VDSS 600V RDS(on) 3.6ohm(typ.)ID 2ATO220Marking and pin Schematic diagramAssignmentFeatures and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 operating temper

 7.2. Size:528K  silikron
 ssf2n60f.pdf pdf_icon

SSF2N60G

SSF2N60F Main Product Characteristics: VDSS 600V RDS(on) 3.6ohm(typ.) ID 2A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove

 7.3. Size:496K  silikron
 ssf2n60d.pdf pdf_icon

SSF2N60G

SSF2N60D Main Product Characteristics VDSS 600V RDS(on) 3.8 (typ.) ID 2A Marking and P in S che ma ti c Diag r am TO-252 Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

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Keywords - SSF2N60G MOSFET datasheet

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