SSF2N60G - аналоги и даташиты транзистора

 

SSF2N60G - Даташиты. Аналоги. Основные параметры


   Наименование производителя: SSF2N60G
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 6.9 ns
   Cossⓘ - Выходная емкость: 39 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 4.2 Ohm
   Тип корпуса: TO251
 

 Аналог (замена) для SSF2N60G

   - подбор ⓘ MOSFET транзистора по параметрам

 

SSF2N60G Datasheet (PDF)

 ..1. Size:451K  silikron
 ssf2n60g.pdf pdf_icon

SSF2N60G

SSF2N60G Main Product Characteristics: VDSS 600V RDS(on) 3.5 (typ.) ID 2A TO-251 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 7.1. Size:428K  silikron
 ssf2n60.pdf pdf_icon

SSF2N60G

SSF2N60Main Product Characteristics: VDSS 600V RDS(on) 3.6ohm(typ.)ID 2ATO220Marking and pin Schematic diagramAssignmentFeatures and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 operating temper

 7.2. Size:528K  silikron
 ssf2n60f.pdf pdf_icon

SSF2N60G

SSF2N60F Main Product Characteristics: VDSS 600V RDS(on) 3.6ohm(typ.) ID 2A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove

 7.3. Size:496K  silikron
 ssf2n60d.pdf pdf_icon

SSF2N60G

SSF2N60D Main Product Characteristics VDSS 600V RDS(on) 3.8 (typ.) ID 2A Marking and P in S che ma ti c Diag r am TO-252 Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... SSF2814EH2 , SSF2816E , SSF2816EB , SSF2841 , SSF2N60 , SSF2N60D , SSF2N60D2 , SSF2N60F , P0903BDG , SSF3002EG1 , SSF3018 , SSF3018D , SSF3028C1 , SSF3036C , SSF3051G7 , SSF3055 , SSF3056C .

History: STD10NF06 | ZM075N03D | BLP03N10-F | ZXMP6A17E6 | PFP13N60 | STD12NM50ND | NCE01P13I

 

 
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