SSF3055
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSF3055
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 48
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 12
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 15
nC
trⓘ - Rise Time: 6
nS
Cossⓘ -
Output Capacitance: 200
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09
Ohm
Package:
DPAK
SSF3055
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSF3055
Datasheet (PDF)
..1. Size:268K silikron
ssf3055.pdf 
SSF3055 DDESCRIPTION The SSF3055 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This Gdevice is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 25V,ID = 12A RDS(ON)
8.1. Size:461K silikron
ssf3056c.pdf
SSF3056C Main Product Characteristics: NMOS PMOS D1 S1D1 S1NMOSNMOSD1 G1D1 G1VDSS 30V -30V D2 S2D2 S2PMOSPMOSD2 G2D2 G2RDS(on) 37mohm(typ.) 68mohm(typ.) ID 5A -4.5A DFN2X3-8L Schematic diagram Bottom View Features and Benefits: Advanced trench MOSFET process technology Special designed for buck-boost circuit, DSC, portable devices and gene
8.2. Size:722K silikron
ssf3051g7.pdf
SSF3051G7Main Product Characteristics: DVDSS -30V G RDS(on) 45mohm(typ.)SID -4A Marking and pin SOT23-6Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast switching and rev
9.1. Size:331K silikron
ssf3018.pdf
SSF3018Feathers: ID=60A Advanced trench process technology BV=100V Special designed for Convertors and power controls Rdson=15mohm High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF3018 is a new generation of middle voltage and high current NChannel enhancement mode t
9.2. Size:339K silikron
ssf3018d.pdf
SSF3018D Feathers: ID=80A Advanced trench process technology BV=100V Special designed for Convertors and power controls Rdson=14mohm High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF3018D is a new generation of middle voltage and high current NChannel enhancement mod
9.3. Size:439K silikron
ssf3002eg1.pdf
SSF3002EG1Main Product Characteristics:V 30VDSSR (on) 1ohm(typ.)DSI 0.5ADMarking and pinSOT23 Schematic diagramAssignmentFeatures andBenefits: Advanced trench MOSFET process technology Special designed for PWM, load switching andgeneral purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 1
9.4. Size:460K silikron
ssf3092g1.pdf
SSF3092G1Main Product Characteristics:V 30VDSSR (on) 92mohm(typ.)DSI 1.4A DMarking and pinSOT23 Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching andgeneral purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
9.5. Size:468K silikron
ssf3028c1.pdf
SSF3028C1Main Product Characteristics:V 30VDSSR (on) 28mohm(typ.)DSI 21ADTO-252 Marking and pinSchematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching andgeneral purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 op
9.6. Size:384K silikron
ssf3036c.pdf
SSF3036C Main Product Characteristics: NMOS PMOS VDSS 30V -30V RDS(on) 32.4mohm 61.6mohm N-Channel Mosfet P-Channel Mosfet DFN 3x2-8L Schematic diagram ID 4A -3.6A Bottom View Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast
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