SSF3055 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SSF3055
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 48 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 12 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 200 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
Тип корпуса: DPAK
SSF3055 Datasheet (PDF)
ssf3055.pdf
SSF3055 DDESCRIPTION The SSF3055 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This Gdevice is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 25V,ID = 12A RDS(ON)
ssf3056c.pdf
SSF3056C Main Product Characteristics: NMOS PMOS D1 S1D1 S1NMOSNMOSD1 G1D1 G1VDSS 30V -30V D2 S2D2 S2PMOSPMOSD2 G2D2 G2RDS(on) 37mohm(typ.) 68mohm(typ.) ID 5A -4.5A DFN2X3-8L Schematic diagram Bottom View Features and Benefits: Advanced trench MOSFET process technology Special designed for buck-boost circuit, DSC, portable devices and gene
ssf3051g7.pdf
SSF3051G7Main Product Characteristics: DVDSS -30V G RDS(on) 45mohm(typ.)SID -4A Marking and pin SOT23-6Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast switching and rev
ssf3018.pdf
SSF3018Feathers: ID=60A Advanced trench process technology BV=100V Special designed for Convertors and power controls Rdson=15mohm High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF3018 is a new generation of middle voltage and high current NChannel enhancement mode t
ssf3018d.pdf
SSF3018D Feathers: ID=80A Advanced trench process technology BV=100V Special designed for Convertors and power controls Rdson=14mohm High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF3018D is a new generation of middle voltage and high current NChannel enhancement mod
ssf3002eg1.pdf
SSF3002EG1Main Product Characteristics:V 30VDSSR (on) 1ohm(typ.)DSI 0.5ADMarking and pinSOT23 Schematic diagramAssignmentFeatures andBenefits: Advanced trench MOSFET process technology Special designed for PWM, load switching andgeneral purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 1
ssf3092g1.pdf
SSF3092G1Main Product Characteristics:V 30VDSSR (on) 92mohm(typ.)DSI 1.4A DMarking and pinSOT23 Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching andgeneral purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf3028c1.pdf
SSF3028C1Main Product Characteristics:V 30VDSSR (on) 28mohm(typ.)DSI 21ADTO-252 Marking and pinSchematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching andgeneral purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 op
ssf3036c.pdf
SSF3036C Main Product Characteristics: NMOS PMOS VDSS 30V -30V RDS(on) 32.4mohm 61.6mohm N-Channel Mosfet P-Channel Mosfet DFN 3x2-8L Schematic diagram ID 4A -3.6A Bottom View Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918