All MOSFET. SSF3314E Datasheet

 

SSF3314E MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSF3314E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.5 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: DFN3X3-8L

 SSF3314E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSF3314E Datasheet (PDF)

 ..1. Size:205K  silikron
 ssf3314e.pdf

SSF3314E SSF3314E

SSF3314EDESCRIPTION The SSF3314E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Schematic diagram GENERAL F

 9.1. Size:536K  silikron
 ssf3341.pdf

SSF3314E SSF3314E

SSF3341 Main Product Characteristics: DVDSS -30V G RDS(on) 42m (typ.) SID -4.2A Marking and pin SOT-23 Schematic diagram Assignme nt Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body

 9.2. Size:381K  silikron
 ssf3341l.pdf

SSF3314E SSF3314E

SSF3341LDDESCRIPTION The SSF3341L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable Gfor use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -30V,ID = -4.2A RDS(ON)

 9.3. Size:639K  silikron
 ssf3324.pdf

SSF3314E SSF3314E

SSF3324 Main Product Characteristics: VDSS 30V RDS(on) 26.5mohm(typ.) ID 5.8A Marking and pin SOT23 Schematic diagram Assignme nt Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body rec

 9.4. Size:564K  silikron
 ssf3339.pdf

SSF3314E SSF3314E

SSF3339 Main Product Characteristics: DVDSS -30V G RDS(on) 37m (typ.) SID -4.1A Marking and pin SOT-23 Schematic diagram Assignme nt Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body

 9.5. Size:242K  silikron
 ssf3322.pdf

SSF3314E SSF3314E

SSF3322DDESCRIPTION The SSF3322 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =5.8A RDS(ON)

 9.6. Size:227K  silikron
 ssf3365.pdf

SSF3314E SSF3314E

SSF3365DDESCRIPTION The SSF3365 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable Gfor use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -30V,ID = -3A RDS(ON)

 9.7. Size:231K  silikron
 ssf3338.pdf

SSF3314E SSF3314E

SSF3338 DDESCRIPTION The SSF3338 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =4A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: 4N70G-TM3-T | SE6003C | HYG013N03LS1C2 | MCH3476 | SSP5N80A

 

 
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