SSF3314E - описание и поиск аналогов

 ..1. Size:205K  silikron
 ssf3314e.pdf 

SSF3314E DESCRIPTION The SSF3314E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Schematic diagram GENERAL F

 9.1. Size:536K  silikron
 ssf3341.pdf 

SSF3341 Main Product Characteristics D VDSS -30V G RDS(on) 42m (typ.) S ID -4.2A Marking and pin SOT-23 Schematic diagram Assignme nt Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body

 9.2. Size:381K  silikron
 ssf3341l.pdf 

SSF3341L D DESCRIPTION The SSF3341L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable G for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDS = -30V,ID = -4.2A RDS(ON)

 9.3. Size:639K  silikron
 ssf3324.pdf 

SSF3324 Main Product Characteristics VDSS 30V RDS(on) 26.5mohm(typ.) ID 5.8A Marking and pin SOT23 Schematic diagram Assignme nt Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body rec

 9.4. Size:564K  silikron
 ssf3339.pdf 

SSF3339 Main Product Characteristics D VDSS -30V G RDS(on) 37m (typ.) S ID -4.1A Marking and pin SOT-23 Schematic diagram Assignme nt Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body

 9.5. Size:242K  silikron
 ssf3322.pdf 

SSF3322 D DESCRIPTION The SSF3322 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =5.8A RDS(ON)

 9.6. Size:227K  silikron
 ssf3365.pdf 

SSF3365 D DESCRIPTION The SSF3365 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable G for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDS = -30V,ID = -3A RDS(ON)

 9.7. Size:231K  silikron
 ssf3338.pdf 

SSF3338 D DESCRIPTION The SSF3338 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =4A RDS(ON)