SSF3314E Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SSF3314E
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.7 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 10.5 nC
trⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 130 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
Тип корпуса: DFN3X3-8L
- подбор MOSFET транзистора по параметрам
SSF3314E Datasheet (PDF)
ssf3314e.pdf

SSF3314EDESCRIPTION The SSF3314E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Schematic diagram GENERAL F
ssf3341.pdf

SSF3341 Main Product Characteristics: DVDSS -30V G RDS(on) 42m (typ.) SID -4.2A Marking and pin SOT-23 Schematic diagram Assignme nt Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body
ssf3341l.pdf

SSF3341LDDESCRIPTION The SSF3341L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable Gfor use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -30V,ID = -4.2A RDS(ON)
ssf3324.pdf

SSF3324 Main Product Characteristics: VDSS 30V RDS(on) 26.5mohm(typ.) ID 5.8A Marking and pin SOT23 Schematic diagram Assignme nt Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body rec
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: MPVD2N65BK | IPA600N25NM3S
History: MPVD2N65BK | IPA600N25NM3S



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