SSF4624
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSF4624
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 8
nC
trⓘ - Rise Time: 3
nS
Cossⓘ -
Output Capacitance: 95
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.031
Ohm
Package:
SOP8
SSF4624
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSF4624
Datasheet (PDF)
..1. Size:328K silikron
ssf4624.pdf
SSF4624 DESCRIPTION The SSF4624 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES VDS = 40V,ID =6A RDS(ON)
9.1. Size:545K silikron
ssf4607d.pdf
SSF4607D Main Product Characteristics: DVDSS -30V G RDS(on) 19m(typ.) SID -25A TO-252 Marking and pin Schematic diagram Ass ig nme nt Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse
9.2. Size:496K silikron
ssf4606.pdf
SSF4606 DESCRIPTION The SSF4606 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. P-channel N-channel Schematic diagram GENERAL FEATURES N-Channel VDS = 30V,ID = 6.9A RDS(ON)
9.3. Size:501K silikron
ssf4604.pdf
SSF4604 DESCRIPTION The SSF4604 uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. P-channel N-channel Schematic diagram GENERAL FEATURES D1 D1 D2 D2N-Channel 8 7 6 5VDS = 30V,ID = 6.9A RDS(ON)
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