All MOSFET. SSF4703DC Datasheet

 

SSF4703DC Datasheet and Replacement


   Type Designator: SSF4703DC
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: DFN3X2-8L
 

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SSF4703DC Datasheet (PDF)

 ..1. Size:228K  silikron
 ssf4703dc.pdf pdf_icon

SSF4703DC

SSF4703DCDESCRIPTION The SSF4703DC uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. GENERAL FEATURES Schematic diagram MOSFET VDS = -20V,ID = -3.4A RDS(ON)

 7.1. Size:235K  silikron
 ssf4703.pdf pdf_icon

SSF4703DC

SSF4703 DESCRIPTION The SSF4703 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. GENERAL FEATURES Schematic diagram MOSFET VDS = -20V,ID = -3.4A RDS(ON)

 9.1. Size:637K  silikron
 ssf47ns60h.pdf pdf_icon

SSF4703DC

SSF47NS60H Main Product Characteristics: VDSS 600V RDS(on) 0.059ohm(typ.) ID 47A TO247 Schema t ic diagr am Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF47NS60H series MOSFETs is a new technologywhich combines an innovative su

Datasheet: SSF4032CH3 , SSF4203 , SSF4414 , SSF4604 , SSF4606 , SSF4607D , SSF4624 , SSF4703 , P55NF06 , SSF47NS60H , SSF4953 , SSF4N60 , SSF4N60D , SSF4N60F , SSF4N60G , SSF4NS60D , SSF53A0E .

History: SDD01N70 | 2SK3985-01 | AON3814 | NTLGF3402PT1G | SI3473CDV | RU40S4H | TPHR9003NL

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