SSF4703DC MOSFET. Datasheet pdf. Equivalent
Type Designator: SSF4703DC
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 3.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6.1 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 70 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: DFN3X2-8L
SSF4703DC Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSF4703DC Datasheet (PDF)
ssf4703dc.pdf
SSF4703DCDESCRIPTION The SSF4703DC uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. GENERAL FEATURES Schematic diagram MOSFET VDS = -20V,ID = -3.4A RDS(ON)
ssf4703.pdf
SSF4703 DESCRIPTION The SSF4703 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. GENERAL FEATURES Schematic diagram MOSFET VDS = -20V,ID = -3.4A RDS(ON)
ssf47ns60h.pdf
SSF47NS60H Main Product Characteristics: VDSS 600V RDS(on) 0.059ohm(typ.) ID 47A TO247 Schema t ic diagr am Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF47NS60H series MOSFETs is a new technologywhich combines an innovative su
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: MDD1051RH
History: MDD1051RH
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