SSF47NS60H Datasheet and Replacement
Type Designator: SSF47NS60H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 47 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 83 nS
Cossⓘ - Output Capacitance: 8400 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: TO247
SSF47NS60H substitution
SSF47NS60H Datasheet (PDF)
ssf47ns60h.pdf

SSF47NS60H Main Product Characteristics: VDSS 600V RDS(on) 0.059ohm(typ.) ID 47A TO247 Schema t ic diagr am Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF47NS60H series MOSFETs is a new technologywhich combines an innovative su
ssf4703.pdf

SSF4703 DESCRIPTION The SSF4703 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. GENERAL FEATURES Schematic diagram MOSFET VDS = -20V,ID = -3.4A RDS(ON)
ssf4703dc.pdf

SSF4703DCDESCRIPTION The SSF4703DC uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. GENERAL FEATURES Schematic diagram MOSFET VDS = -20V,ID = -3.4A RDS(ON)
Datasheet: SSF4203 , SSF4414 , SSF4604 , SSF4606 , SSF4607D , SSF4624 , SSF4703 , SSF4703DC , IRFP250N , SSF4953 , SSF4N60 , SSF4N60D , SSF4N60F , SSF4N60G , SSF4NS60D , SSF53A0E , SSF5506 .
Keywords - SSF47NS60H MOSFET datasheet
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