All MOSFET. SSF47NS60H Datasheet

 

SSF47NS60H Datasheet and Replacement


   Type Designator: SSF47NS60H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 83 nS
   Cossⓘ - Output Capacitance: 8400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO247
 

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SSF47NS60H Datasheet (PDF)

 ..1. Size:637K  silikron
ssf47ns60h.pdf pdf_icon

SSF47NS60H

SSF47NS60H Main Product Characteristics: VDSS 600V RDS(on) 0.059ohm(typ.) ID 47A TO247 Schema t ic diagr am Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF47NS60H series MOSFETs is a new technologywhich combines an innovative su

 9.1. Size:235K  silikron
ssf4703.pdf pdf_icon

SSF47NS60H

SSF4703 DESCRIPTION The SSF4703 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. GENERAL FEATURES Schematic diagram MOSFET VDS = -20V,ID = -3.4A RDS(ON)

 9.2. Size:228K  silikron
ssf4703dc.pdf pdf_icon

SSF47NS60H

SSF4703DCDESCRIPTION The SSF4703DC uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. GENERAL FEATURES Schematic diagram MOSFET VDS = -20V,ID = -3.4A RDS(ON)

Datasheet: SSF4203 , SSF4414 , SSF4604 , SSF4606 , SSF4607D , SSF4624 , SSF4703 , SSF4703DC , IRFP250N , SSF4953 , SSF4N60 , SSF4N60D , SSF4N60F , SSF4N60G , SSF4NS60D , SSF53A0E , SSF5506 .

History: IRFS630B | SML10026DFN

Keywords - SSF47NS60H MOSFET datasheet

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