SSF47NS60H Specs and Replacement

Type Designator: SSF47NS60H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 83 nS

Cossⓘ - Output Capacitance: 8400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: TO247

SSF47NS60H substitution

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SSF47NS60H datasheet

 ..1. Size:637K  silikron
 ssf47ns60h.pdf pdf_icon

SSF47NS60H

SSF47NS60H Main Product Characteristics VDSS 600V RDS(on) 0.059ohm(typ.) ID 47A TO247 Schema t ic diagr am Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF47NS60H series MOSFETs is a new technology which combines an innovative su... See More ⇒

 9.1. Size:235K  silikron
 ssf4703.pdf pdf_icon

SSF47NS60H

SSF4703 DESCRIPTION The SSF4703 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. GENERAL FEATURES Schematic diagram MOSFET VDS = -20V,ID = -3.4A RDS(ON) ... See More ⇒

 9.2. Size:228K  silikron
 ssf4703dc.pdf pdf_icon

SSF47NS60H

SSF4703DC DESCRIPTION The SSF4703DC uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. GENERAL FEATURES Schematic diagram MOSFET VDS = -20V,ID = -3.4A RDS(ON) ... See More ⇒

Detailed specifications: SSF4203, SSF4414, SSF4604, SSF4606, SSF4607D, SSF4624, SSF4703, SSF4703DC, IRFB4115, SSF4953, SSF4N60, SSF4N60D, SSF4N60F, SSF4N60G, SSF4NS60D, SSF53A0E, SSF5506

Keywords - SSF47NS60H MOSFET specs

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