All MOSFET. SSF5NS65UG Datasheet

 

SSF5NS65UG MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSF5NS65UG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 17 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
   Package: IPAK

 SSF5NS65UG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSF5NS65UG Datasheet (PDF)

 ..1. Size:459K  silikron
ssf5ns65ug.pdf

SSF5NS65UG SSF5NS65UG

SSF5NS65UG Main Product Characteristics: VDSS 650V RDS(on) 1.1 (typ.) ID 5A TO-251 (IPAK) Marking and p in Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS65UG series MOSFETs is a new technology,

 5.1. Size:469K  silikron
ssf5ns65ud.pdf

SSF5NS65UG SSF5NS65UG

SSF5NS65UD Main Product Characteristics: VDSS 650V RDS(on) 0.74 (typ.) ID 5A TO-252 (DPAK) Marking and p in Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS65UD series MOSFETs is a new technology,

 5.2. Size:446K  silikron
ssf5ns65uf.pdf

SSF5NS65UG SSF5NS65UG

SSF5NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.9 (typ.) ID 5A TO-220F Marking and p in Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS65UF series MOSFETs is a new technology, which

 6.1. Size:477K  silikron
ssf5ns65g.pdf

SSF5NS65UG SSF5NS65UG

SSF5NS65G Main Product Characteristics: VDSS 650V RDS(on) 1.0 (typ.) ID 5A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF5NS65G series MOSFETs is a new te

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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