SSS1206 MOSFET. Datasheet pdf. Equivalent
Type Designator: SSS1206
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 375 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 180 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 224 nC
trⓘ - Rise Time: 141 nS
Cossⓘ - Output Capacitance: 657 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO220
SSS1206 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSS1206 Datasheet (PDF)
sss1206.pdf
SSS1206 Main Product Characteristics VDSS 120V RDS(on) 4m (typ.) ID 180A Mar ki ng a nd p in Schema tic diagra m TO-220 Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
sss1206h.pdf
SSS1206HMain Product Characteristics VDSS 120V RDS(on) 4.7m (typ.) ID 180A Marking and pin TO-247Schematic diagramAssignmentFeatures and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 oper
sss12n60.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS12N60N N-CHANNEL MOSFET Package MAIN CHARACTERISTICS 12 A ID 600 V VDSS Rdson 0.65 @Vgs=10V39nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918