SSS1206 Specs and Replacement

Type Designator: SSS1206

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 375 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 141 nS

Cossⓘ - Output Capacitance: 657 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO220

SSS1206 substitution

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SSS1206 datasheet

 ..1. Size:491K  silikron
sss1206.pdf pdf_icon

SSS1206

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 0.1. Size:337K  silikron
sss1206h.pdf pdf_icon

SSS1206

SSS1206H Main Product Characteristics VDSS 120V RDS(on) 4.7m (typ.) ID 180A Marking and pin TO-247 Schematic diagram Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 oper... See More ⇒

 9.1. Size:8243K  shenzhen
sss12n60.pdf pdf_icon

SSS1206

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS12N60 N N-CHANNEL MOSFET Package MAIN CHARACTERISTICS 12 A ID 600 V VDSS Rdson 0.65 @Vgs=10V 39nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS ... See More ⇒

Detailed specifications: SSF5NS70G, SSF5NS70D, SSF5NS70F, SSF5NS70GB, SSF5NS70UF, SSF5NS70UG, SSS1004, SSS1004A7, IRF530, SSS1206H, SSS1510, SSF11NS65UF, SSF6005, SSF6007, SSF6008, SSF6010, SSF6010A

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