All MOSFET. SSS1206 Datasheet

 

SSS1206 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSS1206
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 375 W
   Maximum Drain-Source Voltage |Vds|: 120 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 180 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 224 nC
   Rise Time (tr): 141 nS
   Drain-Source Capacitance (Cd): 657 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.006 Ohm
   Package: TO220

 SSS1206 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSS1206 Datasheet (PDF)

 ..1. Size:491K  silikron
 sss1206.pdf

SSS1206 SSS1206

SSS1206 Main Product Characteristics VDSS 120V RDS(on) 4m (typ.) ID 180A Mar ki ng a nd p in Schema tic diagra m TO-220 Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 0.1. Size:337K  silikron
 sss1206h.pdf

SSS1206 SSS1206

SSS1206HMain Product Characteristics VDSS 120V RDS(on) 4.7m (typ.) ID 180A Marking and pin TO-247Schematic diagramAssignmentFeatures and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 oper

 9.1. Size:8243K  shenzhen
 sss12n60.pdf

SSS1206 SSS1206

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS12N60N N-CHANNEL MOSFET Package MAIN CHARACTERISTICS 12 A ID 600 V VDSS Rdson 0.65 @Vgs=10V39nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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