SSF6646 Datasheet and Replacement
Type Designator: SSF6646
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOP8
SSF6646 substitution
SSF6646 Datasheet (PDF)
ssf6646.pdf

SSF6646 DESCRIPTION The SSF6646 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . Schematic diagram GENERAL FEATURES VDS = 60V,ID =4.5A R
ssf6670.pdf

SSF6670 DESCRIPTION The SSF6670 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . Schematic diagram GENERAL FEATURES VDS = 60V,ID =3.5A R
Datasheet: SSF6014D , SSF6014J7 , SSF6014J8 , SSF6025 , SSF6072G5 , SSF6092G1 , SSF6114 , SSF6401 , IRF530 , SSF6670 , SSF6808 , SSF6808A , SSF6808D , SSF6814 , SSF6816 , SSF6908 , SSF6N40D .
History: BSC046N10NS3G | LSE60R280HT | MMD80R900P | AP4569GM | AP4513GM-HF | STP13N60DM2 | SQR50N04-3M8
Keywords - SSF6646 MOSFET datasheet
SSF6646 cross reference
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History: BSC046N10NS3G | LSE60R280HT | MMD80R900P | AP4569GM | AP4513GM-HF | STP13N60DM2 | SQR50N04-3M8



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