SSF6N80F Specs and Replacement

Type Designator: SSF6N80F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 51 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23.6 nS

Cossⓘ - Output Capacitance: 81 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm

Package: TO220F

SSF6N80F substitution

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SSF6N80F datasheet

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SSF6N80F

SSF6N80F Main Product Characteristics VDSS 800V RDS(on) 2.2 (typ.) ID 5.5A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body reco... See More ⇒

 7.1. Size:263K  1
 ssf6n80a.pdf pdf_icon

SSF6N80F

SSF6N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.472 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha... See More ⇒

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SSF6N80F

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SSF6N80F

SSF6N80G Main Product Characteristics VDSS 800V RDS(on) 2.35 (typ.) ID 5.5A Marking and p in TO-251 (IPAK) Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov... See More ⇒

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Detailed specifications: SSF6814, SSF6816, SSF6908, SSF6N40D, SSF6N60G, SSF6N70G, SSF6N70GM, SSF6N80A6, 7N60, SSF6N80G, SSF6NS65UF, SSF6NS70G, SSF6NS70D, SSF6NS70F, SSF6NS70UD, SSF6NS70UG, SSF6NS70UGS

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