IRC530-007 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRC530-007
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 79 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 650 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: TO220
IRC530-007 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRC530-007 Datasheet (PDF)
irc530pbf.pdf
PD-96001BIRC530PbF Lead-Freewww.irf.com 12/10/05IRC530PbF2 www.irf.comIRC530PbFwww.irf.com 3IRC530PbF4 www.irf.comIRC530PbFwww.irf.com 5IRC530PbF6 www.irf.comIRC530PbFwww.irf.com 7IRC530PbF8 www.irf.comIRC530PbFHexsenseTO-220 5L Package Outline ( Dimensions are shown in millimeters (inches)Hexsense TO-220 5L Part Marking InformationEXAMPL
Datasheet: IRC340 , IRC350 , IRC420 , IRC430 , IRC440 , IRC450 , IRC520 , IRC530 , EMB04N03H , IRC530-008 , IRC5305 , IRC530A , IRC531 , IRC531-007 , IRC531-008 , IRC533 , IRC533A .
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918