SSF7N60 Datasheet and Replacement. Cross Reference Search

SSF7N60 Datasheet (PDF)

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SSF7N60 Features VDSS = 600V Extremely high dv/dt capability ID = 7A Low Gate Charge Qg results in Simple Drive Requirement Rdson = 0.9 (typ.) 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Description The SSF7N60 is a new generation of high voltage NChannel enhancement mode

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November 2001SSF7N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.4A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especially tailored to Fast s

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SSF7N60F Main Product Characteristics: VDSS 600V RDS(on) 0.9ohm(typ.) ID 7A Marking and p in TO220F Schematic diagram Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

Datasheet: SSF7509A , SSF7509B , SSF7509J7 , SSF7510 , SSF7604 , SSF7607 , SSF7609 , SSF7610 , IRF640 , SSF7N60F , SSF7N65F , SSF7NS60D , SSF7NS60F , SSF7NS65G , SSF7NS65UD , SSF7NS65UF , SSF7NS65UG .