SSF7N60 Features VDSS = 600V Extremely high dv/dt capability ID = 7A Low Gate Charge Qg results in Simple Drive Requirement Rdson = 0.9 (typ.) 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Description The SSF7N60 is a new generation of high voltage NChannel enhancement mode

November 2001SSF7N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.4A, 600V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 38 nC)planar, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been especially tailored to Fast s

SSF7N60F Main Product Characteristics: VDSS 600V RDS(on) 0.9ohm(typ.) ID 7A Marking and p in TO220F Schematic diagram Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery