All MOSFET. SSF7NS60D Datasheet

 

SSF7NS60D MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSF7NS60D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.9 nC
   trⓘ - Rise Time: 20.3 nS
   Cossⓘ - Output Capacitance: 348 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: DPAK

 SSF7NS60D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSF7NS60D Datasheet (PDF)

 ..1. Size:544K  silikron
ssf7ns60d.pdf

SSF7NS60D
SSF7NS60D

SSF7NS60D Main Product Characteristics: VDSS 600V RDS(on) 0.56 (typ.) ID 7A TO-252 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS60D series MOSFETs is a new t

 6.1. Size:569K  silikron
ssf7ns60f.pdf

SSF7NS60D
SSF7NS60D

SSF7NS60F Main Product Characteristics: VDSS 600V RDS(on) 0.54(typ.) ID 7A Marking a nd p in Schematic diagram TO220F Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS60F series MOSFETs is a new techno

 7.1. Size:497K  silikron
ssf7ns65g.pdf

SSF7NS60D
SSF7NS60D

SSF7NS65G Main Product Characteristics: VDSS 650V RDS(on) 0.58 (typ.) ID 7A TO-251 Mark in g a nd pin Sch ema tic diag r a m Assignment Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS65G series MOSFETs is a new t

 7.2. Size:449K  silikron
ssf7ns65uf.pdf

SSF7NS60D
SSF7NS60D

SSF7NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.6 (typ.) ID 7A TO-220F Marking and p in Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS65UF series MOSFETs is a new technology, which

 7.3. Size:485K  silikron
ssf7ns65ud.pdf

SSF7NS60D
SSF7NS60D

SSF7NS65UD Main Product Characteristics VDSS 650V RDS(on) 0.65 (typ.) ID 7A TO-252 (DPAK) Marking and Pin Schematic Diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF7NS65UD series MOSFETs is a new technology, whi

 7.4. Size:467K  silikron
ssf7ns65ug.pdf

SSF7NS60D
SSF7NS60D

SSF7NS65UG Main Product Characteristics: VDSS 650V RDS(on) 0.65 (typ.) ID 7A TO-251 (IPAK) Marking and pin Schematic diagram Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF7NS65UG series MOSFETs is a new technology,

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: RJK6018DPM | LSB55R140GT

 

 
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