SSPL7510
MOSFET. Datasheet pdf. Equivalent
Type Designator: SSPL7510
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 230
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 75
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 58
nC
trⓘ - Rise Time: 76.7
nS
Cossⓘ -
Output Capacitance: 518
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01
Ohm
Package:
TO220
SSPL7510
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSPL7510
Datasheet (PDF)
..1. Size:642K silikron
sspl7510.pdf
SSPL7510 Main Product Characteristics: VDSS 75V RDS(on) 9.5m(typ.) ID 75A Mar ki ng a nd p in TO220 Sche ma ti c di agr a m Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
8.1. Size:643K silikron
sspl7509.pdf
SSPL7509 Main Product Characteristics: VDSS 75V RDS(on) 7.2mohm(typ.) ID 75A Mar ki ng a nd p in TO220 Sche ma ti c di agr a m Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
8.2. Size:645K silikron
sspl7508.pdf
SSPL7508 Main Product Characteristics: VDSS 75V RDS(on) 6.25mohm(typ.) ID 120A Mar ki ng a nd p in Sc hemat ic d ia gr am TO220 Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove
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