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SSF8521 Spec and Replacement


   Type Designator: SSF8521
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11.7 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: DFN3X2-8L

 SSF8521 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSF8521 Specs

 ..1. Size:287K  silikron
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SSF8521

SSF8521 DESCRIPTION The SSF8521 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Schematic diagram GENERAL FEATURES MOSFET VDS = -20V,ID = -4.4A RDS(ON) ... See More ⇒

 9.1. Size:350K  silikron
 ssf8509.pdf pdf_icon

SSF8521

SSF8509 Main Product Characteristics VDSS 85V RDS(on) 7mohm(typ.) ID 80A Marking and pin TO220 Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 ... See More ⇒

Detailed specifications: SSPL6040D , SSF80100 , SSF8205 , SSF8205A , SSF8205U , SSF8205UH2 , SSF8421 , SSF8509 , IRF9540N , SSF8810 , SSF8822 , SSF8N60 , SSF8N65 , SSF8N80 , SSF8N80F , SSF8N80ZH , SSF8NP60U .

History: IPP110N20NA | MRF177M

Keywords - SSF8521 MOSFET specs

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