SSF8521 Datasheet. Specs and Replacement

Type Designator: SSF8521  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.7 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: DFN3X2-8L

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SSF8521 datasheet

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SSF8521

SSF8521 DESCRIPTION The SSF8521 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Schematic diagram GENERAL FEATURES MOSFET VDS = -20V,ID = -4.4A RDS(ON) ... See More ⇒

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SSF8521

SSF8509 Main Product Characteristics VDSS 85V RDS(on) 7mohm(typ.) ID 80A Marking and pin TO220 Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 ... See More ⇒

Detailed specifications: SSPL6040D, SSF80100, SSF8205, SSF8205A, SSF8205U, SSF8205UH2, SSF8421, SSF8509, IRF9540N, SSF8810, SSF8822, SSF8N60, SSF8N65, SSF8N80, SSF8N80F, SSF8N80ZH, SSF8NP60U

Keywords - SSF8521 MOSFET specs

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