SSF8521 Datasheet and Replacement
Type Designator: SSF8521
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11.7 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: DFN3X2-8L
SSF8521 substitution
SSF8521 Datasheet (PDF)
ssf8521.pdf

SSF8521 DESCRIPTION The SSF8521 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Schematic diagram GENERAL FEATURES MOSFET VDS = -20V,ID = -4.4A RDS(ON)
ssf8509.pdf

SSF8509Main Product Characteristics: VDSS 85V RDS(on) 7mohm(typ.)ID 80AMarking and pin TO220Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175
Datasheet: SSPL6040D , SSF80100 , SSF8205 , SSF8205A , SSF8205U , SSF8205UH2 , SSF8421 , SSF8509 , IRF1010E , SSF8810 , SSF8822 , SSF8N60 , SSF8N65 , SSF8N80 , SSF8N80F , SSF8N80ZH , SSF8NP60U .
History: SSF90R900S2
Keywords - SSF8521 MOSFET datasheet
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History: SSF90R900S2



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