All MOSFET. SSF8521 Datasheet

 

SSF8521 Datasheet and Replacement


   Type Designator: SSF8521
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 4.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 11.7 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: DFN3X2-8L
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SSF8521 Datasheet (PDF)

 ..1. Size:287K  silikron
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SSF8521

SSF8521 DESCRIPTION The SSF8521 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Schematic diagram GENERAL FEATURES MOSFET VDS = -20V,ID = -4.4A RDS(ON)

 9.1. Size:350K  silikron
 ssf8509.pdf pdf_icon

SSF8521

SSF8509Main Product Characteristics: VDSS 85V RDS(on) 7mohm(typ.)ID 80AMarking and pin TO220Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CHM85A3PAGP | TK7P65W | SFFX054Z

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