SSF8810 Specs and Replacement
Type Designator: SSF8810
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 142 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TSSOP8
SSF8810 substitution
- MOSFET ⓘ Cross-Reference Search
SSF8810 datasheet
ssf8810.pdf
SSF8810 Main Product Characteristics VDSS 20V RDS(on) 14m (typ.) ID 8A Marking and pin TSSOP-8 Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Ultra low on-resistance with low gate charge High Power and current handing capability 150 operating temperature G/S ESD protect 2KV (HBM) Description Th... See More ⇒
ssf8822.pdf
SSF8822 D1 D2 DESCRIPTION The SSF8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G1 G2 with gate voltages as low as 0.8V. This device is suitable for use as a uni-directional or bi-directional load switch, S1 S2 facilitated by its common-drain configuration. Marking and pin Assignment GENERAL FEATURES V = 20V,I = 7A DS ... See More ⇒
Detailed specifications: SSF80100, SSF8205, SSF8205A, SSF8205U, SSF8205UH2, SSF8421, SSF8509, SSF8521, IRF4905, SSF8822, SSF8N60, SSF8N65, SSF8N80, SSF8N80F, SSF8N80ZH, SSF8NP60U, SSF9435
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