All MOSFET. SSF8N80ZH Datasheet

 

SSF8N80ZH MOSFET. Datasheet pdf. Equivalent

Type Designator: SSF8N80ZH

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 48 nC

Rise Time (tr): 43 nS

Drain-Source Capacitance (Cd): 150 pF

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: TO220F

SSF8N80ZH Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSF8N80ZH Datasheet (PDF)

1.1. ssf8n80zh.pdf Size:562K _silikron

SSF8N80ZH
SSF8N80ZH

 SSF8N80ZF  Main Product Characteristics: VDSS 800V RDS(on) 1.1Ω (typ.) ID 8A TO-220F Marking and pin Schematic diagram  Assignment  Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

3.1. ssf8n80a.pdf Size:938K _samsung

SSF8N80ZH
SSF8N80ZH

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.000 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

3.2. ssf8n80.pdf Size:531K _silikron

SSF8N80ZH
SSF8N80ZH

 SSF8N80 Main Product Characteristics: VDSS 800V RDS(on) 1.38Ω(typ.) ID 8A TO-220 Ma r k ing an d pin S che ma ti c di ag r a m Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recover

 3.3. ssf8n80f.pdf Size:526K _silikron

SSF8N80ZH
SSF8N80ZH

 SSF8N80F Main Product Characteristics: VDSS 800V RDS(on) 1.3Ω (typ.) ID 8A TO-220F Ma r k ing an d pin S che ma ti c di ag r a m Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recov

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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