SSF8N80ZH Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SSF8N80ZH
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 45 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 43 ns
Cossⓘ - Выходная емкость: 150 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
Тип корпуса: TO220F
- подбор MOSFET транзистора по параметрам
SSF8N80ZH Datasheet (PDF)
ssf8n80zh.pdf

SSF8N80ZFMain Product Characteristics: VDSS 800V RDS(on) 1.1 (typ.) ID 8ATO-220FMarking and pin Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf8n80a.pdf

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.000 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu
ssf8n80f.pdf

SSF8N80F Main Product Characteristics: VDSS 800V RDS(on) 1.3 (typ.) ID 8A TO-220F Ma r k ing an d pin S che ma ti c di ag r a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov
ssf8n80.pdf

SSF8N80 Main Product Characteristics: VDSS 800V RDS(on) 1.38(typ.) ID 8A TO-220 Ma r k ing an d pin S che ma ti c di ag r a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: SQJ474EP | STP80NE03L-06
History: SQJ474EP | STP80NE03L-06



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