SSF8NP60U MOSFET. Datasheet pdf. Equivalent
Type Designator: SSF8NP60U
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 62.5 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 8 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 14 nS
Drain-Source Capacitance (Cd): 19 pF
Maximum Drain-Source On-State Resistance (Rds): 0.85 Ohm
Package: TO220
SSF8NP60U Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSF8NP60U Datasheet (PDF)
1.1. ssf8np60u.pdf 
Size:482K _silikron
SSF8NP60U Main Product Characteristics: VDSS 600V RDS(on) 0.73Ω (typ.) ID 8A ① Marking and p in Schematic diagram TO-220 Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: It utilizes the latest processing techniques to achieve
5.1. ssf8n80a.pdf Size:938K _samsung
Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.000 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units
5.2. ssf8n90a.pdf Size:935K _samsung
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.6 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 1.247 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units
5.3. ssf8n65.pdf Size:434K _silikron
SSF8N65 Features VDSS = 650V ■ Extremely high dv/dt capability ID = 8A ■ Low Gate Charge Qg results in Simple Drive Requirement Rdson = 0.95Ω (typ.) ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Description The SSF8N65 is a new generation of high voltage N–Channel enhancement mod
5.4. ssf8n60.pdf Size:434K _silikron
SSF8N60 Features VDSS = 600V ■ Extremely high dv/dt capability ID = 8A ■ Low Gate Charge Qg results in Simple Drive Requirement Rdson = 0.85Ω (typ.) ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Description The SSF8N60 is a new generation of high voltage N–Channel enhancement mod
5.5. ssf8n80.pdf Size:531K _silikron
SSF8N80 Main Product Characteristics: VDSS 800V RDS(on) 1.38Ω(typ.) ID 8A TO-220 Ma r k ing an d pin S che ma ti c di ag r a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover
5.6. ssf8n80f.pdf Size:526K _silikron
SSF8N80F Main Product Characteristics: VDSS 800V RDS(on) 1.3Ω (typ.) ID 8A TO-220F Ma r k ing an d pin S che ma ti c di ag r a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov
5.7. ssf8n80zh.pdf Size:562K _silikron
SSF8N80ZF Main Product Characteristics: VDSS 800V RDS(on) 1.1Ω (typ.) ID 8A TO-220F Marking and pin Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
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