All MOSFET. SSFD3004 Datasheet

 

SSFD3004 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSFD3004
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 450 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO252E-2-M

 SSFD3004 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSFD3004 Datasheet (PDF)

 ..1. Size:293K  silikron
 ssfd3004.pdf

SSFD3004 SSFD3004

SSFD3004DDESCRIPTION The SSFD3004 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =55A RDS(ON)

 7.1. Size:668K  silikron
 ssfd3006.pdf

SSFD3004 SSFD3004

SSFD3006 Main Product Characteristics: VDSS 30V SSF3612DSSF3612DSSF3612DSSF3612DSSFD3006SSFD3006 RDS(on) 3.8m (typ.) ID 90A TO-252 (D-PAK)Marking and pin Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance wi

 7.2. Size:222K  silikron
 ssfd3005.pdf

SSFD3004 SSFD3004

SSFD3005DDESCRIPTION The SSFD3005 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS =- 30V,ID =-10A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FDZ197PZ

 

 
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