All MOSFET. SSFD3006 Datasheet

 

SSFD3006 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSFD3006
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 459 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: DPAK

 SSFD3006 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSFD3006 Datasheet (PDF)

 ..1. Size:668K  silikron
 ssfd3006.pdf

SSFD3006 SSFD3006

SSFD3006 Main Product Characteristics: VDSS 30V SSF3612DSSF3612DSSF3612DSSF3612DSSFD3006SSFD3006 RDS(on) 3.8m (typ.) ID 90A TO-252 (D-PAK)Marking and pin Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance wi

 7.1. Size:222K  silikron
 ssfd3005.pdf

SSFD3006 SSFD3006

SSFD3005DDESCRIPTION The SSFD3005 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS =- 30V,ID =-10A RDS(ON)

 7.2. Size:293K  silikron
 ssfd3004.pdf

SSFD3006 SSFD3006

SSFD3004DDESCRIPTION The SSFD3004 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =55A RDS(ON)

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2N7002(Z)

 

 
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