SSFM8005 Datasheet and Replacement
Type Designator: SSFM8005
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 376 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 120 nC
tr ⓘ - Rise Time: 12.2 nS
Cossⓘ - Output Capacitance: 670 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: TO220AB
SSFM8005 Datasheet (PDF)
ssfm8005.pdf

SSFM8005Main Product Characteristics: VDSS 80V RDS(on) 4.5mohmID 180A TO-220ABTO-220ABFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 operating temperature Description: It
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