SSFN2316E Specs and Replacement

Type Designator: SSFN2316E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: GEM2928-8L

SSFN2316E substitution

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SSFN2316E datasheet

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SSFN2316E

SSFN2316E GENERAL FEATURES VDS = 20V,ID = 6.5A RDS(ON) ... See More ⇒

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 ssfn2220.pdf pdf_icon

SSFN2316E

SSFN2220 DESCRIPTION The SSFN2220 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram GENERAL FEATURES VDS = 20V,ID = 6A RDS(ON) ... See More ⇒

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SSFN2316E

SSFN2269 DESCRIPTION The SSFN2269 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = -20V,ID =-3.3A Schematic diagram RDS(ON) ... See More ⇒

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SSFN2316E

SSFN2569 Main Product Characteristics D1 D2 VDSS -20V G1 G2 RDS(on) 55m (typ.) S1 S2 ID -3.4A DFN 3x2-8L Schemat ic diagram Bottom View Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body rec... See More ⇒

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Detailed specifications: SSFM1022, SSFM2506, SSFM3008, SSFM3008H1, SSFM3008L, SSFM8005, SSFN2220, SSFN2269, 2SK3568, SSFN2569, SSFN3313, SSFN3317, SSFN6816, SSFT3904, SSFT3904J7-HF, SSFT3904U, SSFT3906

Keywords - SSFN2316E MOSFET specs

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