SSFN2316E Datasheet and Replacement
Type Designator: SSFN2316E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: GEM2928-8L
SSFN2316E substitution
SSFN2316E Datasheet (PDF)
ssfn2220.pdf

SSFN2220DESCRIPTION The SSFN2220 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram GENERAL FEATURES VDS = 20V,ID = 6A RDS(ON)
ssfn2269.pdf

SSFN2269DESCRIPTION The SSFN2269 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = -20V,ID =-3.3A Schematic diagram RDS(ON)
ssfn2569.pdf

SSFN2569 Main Product Characteristics: D1D2VDSS -20V G1 G2 RDS(on) 55m (typ.) S1 S2ID -3.4A DFN 3x2-8L Schemat ic diagram Bottom View Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body rec
Datasheet: SSFM1022 , SSFM2506 , SSFM3008 , SSFM3008H1 , SSFM3008L , SSFM8005 , SSFN2220 , SSFN2269 , 5N65 , SSFN2569 , SSFN3313 , SSFN3317 , SSFN6816 , SSFT3904 , SSFT3904J7-HF , SSFT3904U , SSFT3906 .
History: SML20S67 | HYG013N03LS1C2 | SSU80R850S | NDS9959 | SD2932 | SWB12N65D | SML20L100
Keywords - SSFN2316E MOSFET datasheet
SSFN2316E cross reference
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History: SML20S67 | HYG013N03LS1C2 | SSU80R850S | NDS9959 | SD2932 | SWB12N65D | SML20L100



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