SSFN6816 Specs and Replacement
Type Designator: SSFN6816
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: DFN2X5-6
SSFN6816 substitution
- MOSFET ⓘ Cross-Reference Search
SSFN6816 datasheet
ssfn6816.pdf
SSFN6816 DESCRIPTION The SSFN6816 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Schematic diagram GENERAL F... See More ⇒
Detailed specifications: SSFM3008L, SSFM8005, SSFN2220, SSFN2269, SSFN2316E, SSFN2569, SSFN3313, SSFN3317, SI2302, SSFT3904, SSFT3904J7-HF, SSFT3904U, SSFT3906, SSFT4002, SSFT4003, SSFT4003A, SSFT4004
Keywords - SSFN6816 MOSFET specs
SSFN6816 cross reference
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