SSFN6816 Datasheet and Replacement
Type Designator: SSFN6816
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: DFN2X5-6
SSFN6816 substitution
SSFN6816 Datasheet (PDF)
ssfn6816.pdf

SSFN6816DESCRIPTION The SSFN6816 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Schematic diagram GENERAL F
Datasheet: SSFM3008L , SSFM8005 , SSFN2220 , SSFN2269 , SSFN2316E , SSFN2569 , SSFN3313 , SSFN3317 , IRFZ46N , SSFT3904 , SSFT3904J7-HF , SSFT3904U , SSFT3906 , SSFT4002 , SSFT4003 , SSFT4003A , SSFT4004 .
History: SWD056R68E7T | APT1004R2KN
Keywords - SSFN6816 MOSFET datasheet
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History: SWD056R68E7T | APT1004R2KN



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