MMFTN123 Datasheet and Replacement

MMFTN123 N-Channel Logic Level Enhancement Mode Field Effect Transistor 1. Gate 2. Source 3. DrainTO-236 Plastic PackageDrainGateSourceOAbsolute Maximum Ratings (Ta = 25 C unless otherwise specified) Parameter Symbol Value UnitDrain-Source Voltage VDSS 100 VGate-Source Voltage VGSS 20 VDrain Current ID 170 mAPeak Drain Current IDM 680 mATotal Power Dissipation P

MMFTN138 N-Channel Logic Level Enhancement Mode Field Effect Transistor for low voltage, low current switching applications 1. Gate 2. Source 3. DrainTO-236 Plastic Package DrainGateSourceOAbsolute Maximum Ratings (Ta = 25 C unless otherwise specified) Parameter Symbol Value UnitDrain-Source Voltage VDSS 50 VDrain-Gate Voltage (RGS 20 K) VDGR 50 VGate-Source

MMFTN138W N-Channel Logic Level Enhancement Mode Field Effect Transistor for low voltage, low current switching applications 1. Gate 2. Source 3. DrainSOT-323 Plastic Package DrainGateSourceAbsolute Maximum Ratings (Ta = 25 unless otherwise specified) Parameter Symbol Value UnitDrain-Source Voltage VDSS 50 VDrain-Gate Voltage (RGS 20 K) VDGR 50 VGate-Source V

MMFTN170 N-Channel Enhancement Mode Field Effect Transistor Feature Voltage controlled small signal switch Drain High saturation current capability Gate1. Gate 2. Source 3. DrainSource TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain-Source Voltage VDSS 60 VDrain-Gate Voltage (RGS 1 M) VDGR 60 VV Gate-Source

MMFTN170www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG 1