MMFTN123 - описание и поиск аналогов

MMFTN123 N-Channel Logic Level Enhancement Mode Field Effect Transistor 1. Gate 2. Source 3. Drain TO-236 Plastic Package Drain Gate Source O Absolute Maximum Ratings (Ta = 25 C unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS 20 V Drain Current ID 170 mA Peak Drain Current IDM 680 mA Total Power Dissipation P

MMFTN138 N-Channel Logic Level Enhancement Mode Field Effect Transistor for low voltage, low current switching applications 1. Gate 2. Source 3. Drain TO-236 Plastic Package Drain Gate Source O Absolute Maximum Ratings (Ta = 25 C unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage VDSS 50 V Drain-Gate Voltage (RGS 20 K ) VDGR 50 V Gate-Source

MMFTN138W N-Channel Logic Level Enhancement Mode Field Effect Transistor for low voltage, low current switching applications 1. Gate 2. Source 3. Drain SOT-323 Plastic Package Drain Gate Source Absolute Maximum Ratings (Ta = 25 unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage VDSS 50 V Drain-Gate Voltage (RGS 20 K ) VDGR 50 V Gate-Source V

MMFTN170 N-Channel Enhancement Mode Field Effect Transistor Feature Voltage controlled small signal switch Drain High saturation current capability Gate 1. Gate 2. Source 3. Drain Source TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Drain-Source Voltage VDSS 60 V Drain-Gate Voltage (RGS 1 M ) VDGR 60 V V Gate-Source

MMFTN170 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 2.8 at VGS = 10 V 60 250 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage SOT-23 TrenchFET Power MOSFET 1200V ESD Protection G 1